IRF7205TRPBF vs IRF9Z34NPBF 比較

詳細並排比較 IRF7205TRPBF 由 Infineon 與 IRF9Z34NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRF7205TRPBF IRF9Z34NPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
FET Type P-Channel MOSFET —
Technology IR HEXFET (4th generation) HEXFET (5th generation)
Drain-to-Source Voltage (VDS) -30 V —
Continuous Drain Current (ID) at TA=25°C -4.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
On-Resistance RDS(on) max @ VGS=-10V 70 mΩ —
On-Resistance RDS(on) max @ VGS=-4.5V 130 mΩ —
Gate Threshold Voltage VGS(th) -1.0 V to -3.0 V —
Total Gate Charge Qg 27 nC —
功率耗散 (TC=25°C) 2.5 W —
工作接面溫度 -55 °C to +150 °C —
封裝 SO-8 (8-SO) TO-220AB (through-hole, 3-pin)
安裝類型 Surface Mount Through Hole
RoHS / Lead-Free Lead-Free (PBF suffix), RoHS compliant —
Packaging Tape & Reel (TR suffix) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Polarity / Channel Type — P-Channel
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) at Tc=25C — -19 A
Pulsed Drain Current (Idm) — -72 A
Power Dissipation (Pd) at Tc=25C — 68 W
On-Resistance Rds(on) at Vgs=-10V — 100 milliohm (typical)
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th) typical/min/max]
Gate Charge (Qg) — 23.3 nC (per Mouser listing)
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
工作溫度範圍 — -55C to +175C (junction)
Pinout (G-D-S) — Pin 1 Gate, Pin 2 Drain (tab), Pin 3 Source
Lead-Free / Halogen-Free — Yes (PBF suffix)
RoHS 狀態 — Compliant

資料表與資源

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