IRF7319TRPBF vs IRF7309TRPBF Perbandingan

Perbandingan bersamaan detil IRF7319TRPBF dari Infineon dan IRF7309TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7319TRPBF IRF7309TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Type Dual MOSFET Array (N-channel + P-channel) —
Technology IR MOSFET / Fifth Generation HEXFET IR HEXFET Generation V
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current N-channel (ID) 6.5 A —
Continuous Drain Current P-channel (ID) 4.9 A —
RDS(on) Max N-channel 29 mOhm (per Infineon product page) —
RDS(on) Max P-channel [DATA_NEEDED: P-channel RDS(on) max] —
Total Power Dissipation (PD) 2 W —
Thermal Resistance Junction-to-Ambient N-ch 120 C/W (steady state) —
Thermal Resistance Junction-to-Ambient P-ch 110 C/W (steady state) —
Package Type 8-SOIC (SO-8) —
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55C to +150C (junction) -55C to +150C (TJ)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] [DATA_NEEDED: typical VGS(th) value]
Lead-Free / RoHS Yes (PBF suffix = Pb-free) —
Packaging Tape & Reel (TR suffix) Tape & Reel
Configuration N-Channel + P-Channel (complementary half-bridge) Dual N-Channel + P-Channel (Complementary)
Polarity — N+P
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (N-channel, TA=25C) — 4 A
Continuous Drain Current (P-channel, TA=25C) — 3 A
On-Resistance (N-channel, max) — 50 mOhm
On-Resistance (P-channel, max) — [DATA_NEEDED: RDS(on) P-channel value]
Power Dissipation (TA=25C) — 1.4 W
Paket — 8-SO (SOIC-8)
Level MSL — MSL-1 (unlimited floor life per JEDEC J-STD-020)
Lead-Free Status — Yes (TRPBF suffix = Pb-free)
Status RoHS — Compliant

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