IRF7342TRPBF vs IRF9952TRPBF Perbandingan

Perbandingan bersamaan detil IRF7342TRPBF dari Infineon dan IRF9952TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRF7342TRPBF IRF9952TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IRF7342TRPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) —
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel IR MOSFET / Fifth Generation HEXFET
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) -3.4 A at 25 C —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) —
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V —
Maximum Power Dissumption (Pd) 2 W —
Rentang Suhu Kerja -55 C to +150 C (Tj) -55C to +150C (junction)
Paket 8-SOIC (SO-8), surface mount 8-pin SOIC (SO-8), surface mount
Tipe Mounting Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) —
Channel Type P-Channel (enhancement mode) —
Number of Channels 2 (dual array) —
Polarity / Configuration — Complementary N-Channel + P-Channel, dual MOSFET array
N-Channel VDS (Drain-Source Voltage) — 30 V
P-Channel VDS (Drain-Source Voltage) — -30 V
N-Channel Continuous Drain Current (ID) — 3.5 A
P-Channel Continuous Drain Current (ID) — 2.3 A
N-Channel R_DS(on) max — 0.10 ohm (at VGS = 10 V)
P-Channel R_DS(on) max — 0.25 ohm (at VGS = -10 V)
Total Package Power Dissipation (PD) — 2 W
Status RoHS — Compliant (Pb-free, indicated by PBF suffix)
Tape and Reel Packaging — Yes (TRPBF suffix)
Qualification — Consumer market

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