IRFR120NTRLPBF vs IRFR120NTRPBF Perbandingan

Perbandingan bersamaan detil IRFR120NTRLPBF dari Infineon dan IRFR120NTRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR120NTRLPBF IRFR120NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology IR MOSFET (HEXFET) HEXFET (IR MOSFET fifth generation)
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 9.4 A 9.4 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance RDS(on) max at VGS=10V 210 mΩ —
Total Gate Charge (Qg) 16.7 nC —
Power Dissipation (PD) at TC=25C 48 W —
Rentang Suhu Hubung Kerja -55C to +175C -55C to +175C
Avalanche Energy Rated Yes (fully avalanche rated) —
Paket PG-TO252-3 (DPAK) TO-252AA (DPAK)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant —
Lead-Free Finish Yes (Pb-free) —
Drain-to-Source Voltage (VDS) — 100 V
Maximum Power Dissipation (PD) at TC=25C — 48 W
Static Drain-to-Source On-Resistance (RDS(on)) max — 210 milliohms at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2 V to 4 V typical
Total Gate Charge (Qg) typical — 16.7 nC
Gate-to-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-to-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss]
Channel Type — N-Channel Enhancement Mode
Avalanche Energy Rating (EAS) — [DATA_NEEDED: EAS]
Thermal Resistance Junction-to-Case (RthJC) max — [DATA_NEEDED: RthJC]
Lead-Free / RoHS Status — Lead-Free, RoHS Compliant

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