IRFR120NTRPBF vs IRFR120NTRLPBF Perbandingan

Perbandingan bersamaan detil IRFR120NTRPBF dari Infineon dan IRFR120NTRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR120NTRPBF IRFR120NTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-to-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25C 9.4 A 9.4 A
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD) at TC=25C 48 W —
Static Drain-to-Source On-Resistance (RDS(on)) max 210 milliohms at VGS=10V —
Gate-to-Source Threshold Voltage (VGS(th)) 2 V to 4 V typical —
Total Gate Charge (Qg) typical 16.7 nC —
Gate-to-Source Charge (Qgs) [DATA_NEEDED: Qgs] —
Gate-to-Drain Charge (Qgd) [DATA_NEEDED: Qgd] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
Rentang Suhu Hubung Kerja -55C to +175C -55C to +175C
Paket TO-252AA (DPAK) PG-TO252-3 (DPAK)
Tipe Mounting Surface Mount Surface Mount
Channel Type N-Channel Enhancement Mode —
Technology HEXFET (IR MOSFET fifth generation) IR MOSFET (HEXFET)
Avalanche Energy Rating (EAS) [DATA_NEEDED: EAS] —
Thermal Resistance Junction-to-Case (RthJC) max [DATA_NEEDED: RthJC] —
Lead-Free / RoHS Status Lead-Free, RoHS Compliant —
FET Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance RDS(on) max at VGS=10V — 210 mΩ
Total Gate Charge (Qg) — 16.7 nC
Power Dissipation (PD) at TC=25C — 48 W
Avalanche Energy Rated — Yes (fully avalanche rated)
Status RoHS — Compliant
Lead-Free Finish — Yes (Pb-free)

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