IRFR120NTRPBF vs IRFR120NTRLPBF Comparison
Detailed side-by-side comparison of IRFR120NTRPBF by Infineon and IRFR120NTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRFR120NTRPBF | IRFR120NTRLPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.26 | $0.62 |
| Drain-to-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID) at TC=25C | 9.4 A | 9.4 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD) at TC=25C | 48 W | β |
| Static Drain-to-Source On-Resistance (RDS(on)) max | 210 milliohms at VGS=10V | β |
| Gate-to-Source Threshold Voltage (VGS(th)) | 2 V to 4 V typical | β |
| Total Gate Charge (Qg) typical | 16.7 nC | β |
| Gate-to-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | β |
| Gate-to-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Transfer Capacitance (Crss) | [DATA_NEEDED: Crss] | β |
| Operating Junction Temperature Range | -55C to +175C | -55C to +175C |
| Package | TO-252AA (DPAK) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| Channel Type | N-Channel Enhancement Mode | β |
| Technology | HEXFET (IR MOSFET fifth generation) | IR MOSFET (HEXFET) |
| Avalanche Energy Rating (EAS) | [DATA_NEEDED: EAS] | β |
| Thermal Resistance Junction-to-Case (RthJC) max | [DATA_NEEDED: RthJC] | β |
| Lead-Free / RoHS Status | Lead-Free, RoHS Compliant | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (VDS) | β | 100 V |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| On-Resistance RDS(on) max at VGS=10V | β | 210 mΞ© |
| Total Gate Charge (Qg) | β | 16.7 nC |
| Power Dissipation (PD) at TC=25C | β | 48 W |
| Avalanche Energy Rated | β | Yes (fully avalanche rated) |
| RoHS Status | β | Compliant |
| Lead-Free Finish | β | Yes (Pb-free) |