IRFR3411TRPBF vs IRFB4110PBF Perbandingan

Perbandingan bersamaan detil IRFR3411TRPBF dari Infineon dan IRFB4110PBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFR3411TRPBF IRFB4110PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok — In Stock
Harga Unit (USD) — $1,55
Polarity N-Channel —
FET Type MOSFET (Metal Oxide) —
V(BR)DSS (Drain-Source Breakdown Voltage) 100 V —
RDS(on) max @ VGS=10V 44 mOhm —
Continuous Drain Current (Id) @ Tc 32 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Pd) @ Tc 130 W —
Gate Charge (Qg) 48 nC —
Operating Mode Enhancement —
Maximum Junction Temperature 175 C —
Rentang Suhu Kerja -55 C to +175 C —
Paket TO-252AA (DPAK) TO-220AB (through-hole)
Tipe Mounting Surface Mount Through Hole
Jumlah Pin 3 —
Technology HEXFET Power MOSFET (IR) HEXFET (planar DMOS)
Avalanche Rated Yes (fully avalanche rated) —
dv/dt Rating Dynamic dv/dt rated —
Lead-Free / RoHS Yes (Lead-free, PBF suffix) —
Tipe Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
Suhu Hubung Kerja — -55 °C to +175 °C
Status RoHS — Compliant (Pb-free suffix)
Lead-Free — Yes (PBF suffix denotes Pb-free)

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