IRFR3411TRPBF vs IRFB4110PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR3411TRPBF sa pamamagitan ng Infineon at IRFB4110PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR3411TRPBF IRFB4110PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock — In Stock
Presyo ng Yunit (USD) — $1.55
Polarity N-Channel —
FET Type MOSFET (Metal Oxide) —
V(BR)DSS (Drain-Source Breakdown Voltage) 100 V —
RDS(on) max @ VGS=10V 44 mOhm —
Continuous Drain Current (Id) @ Tc 32 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Pd) @ Tc 130 W —
Gate Charge (Qg) 48 nC —
Operating Mode Enhancement —
Maximum Junction Temperature 175 C —
Hanay ng Temperature na Operasyon -55 C to +175 C —
Packhaging TO-252AA (DPAK) TO-220AB (through-hole)
Uri ng Pagpapasok Surface Mount Through Hole
Bilang ng Pins 3 —
Technology HEXFET Power MOSFET (IR) HEXFET (planar DMOS)
Avalanche Rated Yes (fully avalanche rated) —
dv/dt Rating Dynamic dv/dt rated —
Lead-Free / RoHS Yes (Lead-free, PBF suffix) —
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TC=25°C — 120 A (bond-wire limited)
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — ±20 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min/max]
On-Resistance RDS(on) max at VGS=10V — 4.5 mΩ
On-Resistance RDS(on) typ at VGS=10V — 3.7 mΩ
Power Dissipation (PD) at TC=25°C — 370 W
Temperature ng Junction na Operasyon — -55 °C to +175 °C
Tindminan RoHS — Compliant (Pb-free suffix)
Lead-Free — Yes (PBF suffix denotes Pb-free)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita