IRLB8748PBF vs IRFZ48NPBF Perbandingan

Perbandingan bersamaan detil IRLB8748PBF dari Infineon dan IRFZ48NPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLB8748PBF IRFZ48NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at TC=25C 92 A —
Continuous Drain Current (ID) at TC=100C [DATA_NEEDED: ID at TC=100C] —
On-Resistance RDS(on) max at VGS=10V 4.8 mOhm —
On-Resistance RDS(on) max at VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate-Source Voltage (VGS) max +/- 20 V —
Gate Threshold Voltage (VGS(th)) typ [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) 15 nC typical 54 nC
Power Dissipation (PD) at TC=25C 75 W —
Rentang Suhu Kerja -55C to +175C (junction) —
Package Type TO-220AB through-hole —
Tipe Mounting Through Hole Through Hole
Technology Family StrongIRFET / HEXFET —
Channel Type N-Channel —
Logic-Level Gate Drive Yes (optimized for 5V VGS) —
Status RoHS Compliant (Pb-free PBF suffix) Compliant
Qualification Standard JEDEC (Industrial market per datasheet) Industrial market
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at TC — 64 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) at VGS=10V — 14 mΩ (maximum)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Power Dissipation (PD) at TC — 130 W
Suhu Hubung Kerja — -55C to +175C
Paket — TO-220AB (through-hole)
Technology — HEXFET (advanced planar)
Lead-Free (PBF suffix) — Yes

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