IRLB8748PBF vs IRFZ48NPBF 비교
다음의 상세 나란히 비교: IRLB8748PBF 제조: Infineon 및 IRFZ48NPBF 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IRLB8748PBF | IRFZ48NPBF |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.68 | $0.65 |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TC=25C | 92 A | — |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.8 mOhm | — |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | +/- 20 V | — |
| Gate Threshold Voltage (VGS(th)) typ | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | 15 nC typical | 54 nC |
| Power Dissipation (PD) at TC=25C | 75 W | — |
| 동작 온도 범위 | -55C to +175C (junction) | — |
| Package Type | TO-220AB through-hole | — |
| 실장 유형 | Through Hole | Through Hole |
| Technology Family | StrongIRFET / HEXFET | — |
| Channel Type | N-Channel | — |
| Logic-Level Gate Drive | Yes (optimized for 5V VGS) | — |
| RoHS 상태 | Compliant (Pb-free PBF suffix) | Compliant |
| Qualification Standard | JEDEC (Industrial market per datasheet) | Industrial market |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at TC | — | 64 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| On-Resistance (RDS(on)) at VGS=10V | — | 14 mΩ (maximum) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) at TC | — | 130 W |
| 동작 접합 온도 | — | -55C to +175C |
| 패키지 | — | TO-220AB (through-hole) |
| Technology | — | HEXFET (advanced planar) |
| Lead-Free (PBF suffix) | — | Yes |