IRLR3636TRPBF vs IRLR7843TRPBF Perbandingan
Perbandingan bersamaan detil IRLR3636TRPBF dari Infineon dan IRLR7843TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | IRLR3636TRPBF | IRLR7843TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel MOSFET, Metal Oxide | — |
| Drain-to-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D) at T_C = 25C | 50 A | — |
| Continuous Drain Current (I_D) at T_C = 100C | [DATA_NEEDED: I_D at 100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| Maximum R_DS(on) at V_GS = 10V | 6.8 mOhm | — |
| Typical R_DS(on) at V_GS = 10V | 5.4 mOhm | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) range] | — |
| Total Gate Charge (Q_G) | 33 nC | — |
| Maximum Power Dissition (P_D) at T_C = 25C | 143 W | — |
| Rentang Suhu Kerja | -55C to +175C | -55C to +175C |
| Paket | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Technology | IR HEXFET / IR MOSFET | HEXFET |
| Status RoHS | Compliant | — |
| Lead-Free | Yes (PBF suffix) | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) @ Tc=25C | — | 161 A |
| Power Dissipation (Pd) @ Tc=25C | — | 140 W |
| On-Resistance Rds(on) Max @ Vgs=10V | — | 3.3 mOhm |
| On-Resistance Rds(on) Max @ Vgs=4.5V | — | 4.5 mOhm (typ) |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | 34 nC |
| Gate-to-Source Voltage Max | — | ±20 V |
| Avalanche Energy (Eas) | — | Fully characterized |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |