IRLR9343TRPBF vs IRLH5030TRPBF Perbandingan

Perbandingan bersamaan detil IRLR9343TRPBF dari Infineon dan IRLH5030TRPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRLR9343TRPBF IRLH5030TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRLR9343TRPBF IRLH5030TRPBF
FET Type P-Channel MOSFET N-Channel
Technology IR HEXFET IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] —
On-Resistance RDS(on) max at VGS=-10V 105 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) 31 nC (typical) 44 nC
Power Dissipation (PD) at Tc=25C 79 W —
Paket PG-TO252-3 (DPAK) Surface Mount PQFN-8 (SuperSO8 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja [DATA_NEEDED: Tj min/max operating range] —
Status RoHS Compliant —
Lead-Free Yes —
Level MSL 1 —
Optimized Application Class-D audio amplifier output stages —
Polarity P-Channel —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TA=25C — 13 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 9 mOhm
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)
Power Dissipation at TA=25C — 3.6 W
Power Dissipation at TC=25C — 156 W
Thermal Resistance to PCB (RthJC) — 0.8 C/W
Profile Height — ≤ 0.9 mm
Qualification — JEDEC standard
Rg Tested — 100%
RoHS Compliance — Compliant (Lead-free, Bromide-free, Halogen-free)
Industry-Standard Pinout — Yes

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