IRLR9343TRPBF vs IRLH5030TRPBF 比較

詳細並排比較 IRLR9343TRPBF 由 Infineon 與 IRLH5030TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRLR9343TRPBF IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF - 55V P-Channel HEXFET MOSFET | Infineon

IRLR9343TRPBF ✓ 啟用中

規格比較

參數 IRLR9343TRPBF IRLH5030TRPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRLR9343TRPBF IRLH5030TRPBF
FET Type P-Channel MOSFET N-Channel
Technology IR HEXFET IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at Tc=25C -20 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current rating] —
On-Resistance RDS(on) max at VGS=-10V 105 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: max VGS rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge (Qg) 31 nC (typical) 44 nC
Power Dissipation (PD) at Tc=25C 79 W —
封裝 PG-TO252-3 (DPAK) Surface Mount PQFN-8 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
工作溫度範圍 [DATA_NEEDED: Tj min/max operating range] —
RoHS 狀態 Compliant —
Lead-Free Yes —
MSL 等級 1 —
Optimized Application Class-D audio amplifier output stages —
Polarity P-Channel —
Drain-to-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at TA=25C — 13 A
Continuous Drain Current (ID) at TC=25C — 100 A
On-Resistance RDS(on) max at VGS=10V — 9 mOhm
Gate Drive Voltage (optimized) — 10 V (capable of 4.5 V)
Power Dissipation at TA=25C — 3.6 W
Power Dissipation at TC=25C — 156 W
Thermal Resistance to PCB (RthJC) — 0.8 C/W
Profile Height — ≤ 0.9 mm
Qualification — JEDEC standard
Rg Tested — 100%
RoHS Compliance — Compliant (Lead-free, Bromide-free, Halogen-free)
Industry-Standard Pinout — Yes

資料表與資源

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