ISC011N03L5SATMA1 vs IAUZ40N06S5L050ATMA1 Perbandingan

Perbandingan bersamaan detil ISC011N03L5SATMA1 dari Infineon dan IAUZ40N06S5L050ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISC011N03L5SATMA1 ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 - 30V 100A OptiMOS 5 N-MOSFET | Infineon

ISC011N03L5SATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC011N03L5SATMA1 IAUZ40N06S5L050ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 / StrongIRFET 30 V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) @ Ta=25C 37 A —
Continuous Drain Current (ID) @ Tc=25C 100 A —
Power Dissipation (PD) @ Ta=25C 2.5 W —
Power Dissipation (PD) @ Tc=25C 96 W —
Paket PG-TDSON-8-1 (TDSON EP, 8-pin, exposed pad) PG-TSDSON-8-33 (TSDSON-8)
Tipe Mounting Surface Mount Surface Mount
Suhu Kerja -55 C to +175 C (TJ) —
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (super-junction N-channel)
Gate Drive Logic-level compatible —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) —
Polarity — N-Channel
Drain-Source Voltage (V<sub>DS</sub>) — 60 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) — [DATA_NEEDED: continuous drain current at Tc=25C]
Drain Current at T<sub>j</sub> — 90 A
R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10V — 5 mΩ
R<sub>DS(on)</sub> @ V<sub>GS</sub>=10V, I<sub>D</sub>=20A — 6.4 mΩ
Gate Threshold Voltage V<sub>GS(th)</sub> — 2.2 V at 29 µA
Total Gate Charge Q<sub>G</sub> — 28.2 nC
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) — 71 W
Suhu Hubung Kerja — -55 °C to +175 °C
Automotive Qualification — AEC-Q100 qualified

Spek dan Sumber

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