ISC011N06LM5ATMA1 vs BSC027N06LS5ATMA1 Perbandingan

Perbandingan bersamaan detil ISC011N06LM5ATMA1 dari Infineon dan BSC027N06LS5ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC027N06LS5ATMA1 BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 - 60V 2.7mOhm N-Ch OptiMOS 5 | Infineon

BSC027N06LS5ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC011N06LM5ATMA1 BSC027N06LS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number ISC011N06LM5ATMA1 —
Technology OptiMOS 5 MOSFET (Metal Oxide)
Polarity / Channel Type N-Channel —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID) at Ta 37 A —
Continuous Drain Current (ID) at Tc 288 A —
Power Dissipation (PD) at Ta 3 W —
Power Dissipation (PD) at Tc 188 W —
RDS(on) max at VGS=10V 1.15 mOhm —
Paket PG-TDSON-8-17 (SuperSO8 5x6 mm) —
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 8
Rentang Suhu Kerja -55C to +175C -55°C to +150°C
Status RoHS Compliant Compliant
Level MSL [DATA_NEEDED: MSL level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] Logic-level
Total Gate Charge (Qg) [DATA_NEEDED: Qg value] —
Series — OptiMOS™ 5
Part Status — Active
FET Type — N-Channel
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID) at Tc=25°C — 100 A
Continuous Drain Current (ID) at Tc=100°C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed IDM]
On-Resistance (RDS(on)) max @ VGS=10V — 2.7 mOhm
On-Resistance (RDS(on)) @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Power Dissipation (PD) at Tc=25°C — 83 W
Paket / Case — PG-TDSON-8-7 (SuperSO8 5x6)
Gate Charge (Qg) — [DATA_NEEDED: total Qg]
Avalanche Energy Rated — Yes
MSL (Moisture Sensitivity Level) — MSL1

Spek dan Sumber

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