ISC0703NLSATMA1 vs IAUT300N08S5N011ATMA1 Perbandingan
Perbandingan bersamaan detil ISC0703NLSATMA1 dari Infineon dan IAUT300N08S5N011ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC0703NLSATMA1 | IAUT300N08S5N011ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Ta=25C | 13 A | — |
| Continuous Drain Current (ID) at Tc=25C | 57 A | — |
| Power Dissipation (PD) at Ta=25C | 3 W | — |
| Power Dissipation (PD) at Tc=25C | 44 W | — |
| Technology | Trench MOSFET (OptiMOS family) | OptiMOS 5 (trench MOSFET) |
| Paket | PG-TDSON-8 (5x6 mm) | PG-HSOF-8-1 (TOLL 10x12 mm) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55C to +150C (junction) | -55C to +175C |
| Standard Package Quantity | 5,000 (reel) | — |
| Level MSL | [DATA_NEEDED: MSL level] | 1 |
| Status RoHS | Compliant | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical and min/max] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: EAS rating] | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 80 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 300 A |
| Pulsed Drain Current (I_DM) | — | 410 A (Tj) |
| R_DS(on) max | — | 1.10 mOhm at V_GS=10 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.8 V |
| Total Gate Charge (Q_g) | — | 231 nC at V_GS=10 V |
| Input Capacitance (C_iss) | — | 16.25 nF |
| Output Capacitance (C_oss) | — | 2.6 nF |
| Reverse Transfer Capacitance (C_rss) | — | 130 pF |
| Power Dissipation (P_D) | — | 375 W at T_C=25C |
| Qualification | — | Automotive (AEC-Q101) |