ISC0805NLSATMA1 vs BSC014N04LSATMA1 Perbandingan
Perbandingan bersamaan detil ISC0805NLSATMA1 dari Infineon dan BSC014N04LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | ISC0805NLSATMA1 | BSC014N04LSATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 5 | — |
| Tipe Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 13 A | — |
| Continuous Drain Current (ID) at TC=25°C | 71 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 74 W | — |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | — |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | — |
| Input Capacitance Ciss | 2.2 nF | — |
| Reverse Transfer Capacitance Crss | 23 pF | — |
| Output Capacitance Coss | 360 pF | — |
| Paket | PG-TDSON-8-46 (SuperSO8 5x6) | SuperSO8 (TDSON-8 FL) 5x6 mm |
| Tipe Mounting | Surface Mount | Surface Mount |
| Rentang Suhu Kerja | -55 °C to +150 °C | -55C to +175C |
| Status RoHS | Compliant | Compliant |
| Series | — | OptiMOS 5 |
| Continuous Drain Current (ID) at Ta | — | 32 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| RDS(on) max at VGS=10 V | — | 1.4 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 96 W |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Technology | — | Trench (OptiMOS 5, thin-wafer) |
| Level MSL | — | 1 (unlimited) |