ISC0805NLSATMA1 vs IQE004NE1LM7CGATMA1 Perbandingan

Perbandingan bersamaan detil ISC0805NLSATMA1 dari Infineon dan IQE004NE1LM7CGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IQE004NE1LM7CGATMA1 IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 - 15V OptiMOS 7 0.45mOhm N-FET | Infineon

IQE004NE1LM7CGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISC0805NLSATMA1 IQE004NE1LM7CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS™ 5 —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V 15 V
Continuous Drain Current (ID) at TA=25°C 13 A —
Continuous Drain Current (ID) at TC=25°C 71 A —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 74 W —
On-Resistance RDS(on) max at VGS=10V 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] —
On-Resistance RDS(on) max at VGS=4.5V 10.7 mΩ —
Gate Threshold Voltage VGS(th) typ 2.3 V —
Gate Charge Qg typ at VGS=4.5V 16 nC —
Input Capacitance Ciss 2.2 nF —
Reverse Transfer Capacitance Crss 23 pF —
Output Capacitance Coss 360 pF —
Paket PG-TDSON-8-46 (SuperSO8 5x6) PG-TTFN-9-3 (surface mount)
Tipe Mounting Surface Mount Surface Mount
Rentang Suhu Kerja -55 °C to +150 °C —
Status RoHS Compliant Compliant
Series — OptiMOS 7
Technology — N-Channel Trench Power MOSFET
Continuous Drain Current (ID, TA=25C) — 58 A
Continuous Drain Current (ID, TC=25C) — 379 A
Power Dissipation (TA=25C) — 2.1 W
Power Dissipation (TC=25C) — 89 W
On-Resistance RDS(on) max — 0.45 mOhm at VGS=10 V
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Suhu Kerja — -55C to +150C (junction)
Level MSL — [DATA_NEEDED: MSL rating]
Packaging — Tape & Reel (CGATMA1 suffix)
Polarization — N-Channel

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