ISC0805NLSATMA1 vs IQE004NE1LM7CGATMA1 对比
详细并排对比 ISC0805NLSATMA1 出自 Infineon 和 IQE004NE1LM7CGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | ISC0805NLSATMA1 | IQE004NE1LM7CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.82 | $1.06 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 5 | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 15 V |
| Continuous Drain Current (ID) at TA=25°C | 13 A | — |
| Continuous Drain Current (ID) at TC=25°C | 71 A | — |
| Power Dissipation (PD) at TA | 2.5 W | — |
| Power Dissipation (PD) at TC | 74 W | — |
| On-Resistance RDS(on) max at VGS=10V | 10.7 mΩ at 4.5V VGS; [DATA_NEEDED: RDS(on) max at 10V] | — |
| On-Resistance RDS(on) max at VGS=4.5V | 10.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.3 V | — |
| Gate Charge Qg typ at VGS=4.5V | 16 nC | — |
| Input Capacitance Ciss | 2.2 nF | — |
| Reverse Transfer Capacitance Crss | 23 pF | — |
| Output Capacitance Coss | 360 pF | — |
| 封装 | PG-TDSON-8-46 (SuperSO8 5x6) | PG-TTFN-9-3 (surface mount) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55 °C to +150 °C | — |
| RoHS 状态 | Compliant | Compliant |
| Series | — | OptiMOS 7 |
| Technology | — | N-Channel Trench Power MOSFET |
| Continuous Drain Current (ID, TA=25C) | — | 58 A |
| Continuous Drain Current (ID, TC=25C) | — | 379 A |
| Power Dissipation (TA=25C) | — | 2.1 W |
| Power Dissipation (TC=25C) | — | 89 W |
| On-Resistance RDS(on) max | — | 0.45 mOhm at VGS=10 V |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| 工作温度 | — | -55C to +150C (junction) |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| Packaging | — | Tape & Reel (CGATMA1 suffix) |
| Polarization | — | N-Channel |