ISK057N04LM6ATSA1 vs IAUCN04S7N019GATMA1 Perbandingan

Perbandingan bersamaan detil ISK057N04LM6ATSA1 dari Infineon dan IAUCN04S7N019GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISK057N04LM6ATSA1 ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISK057N04LM6ATSA1 IAUCN04S7N019GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) Max ±20 V —
Continuous Drain Current (ID) at Ta=25C 15 A —
Continuous Drain Current (ID) at Tc=25C 64 A —
Power Dissipation (PD) at Ta 2.1 W —
Power Dissipation (PD) at Tc 39.1 W —
On-Resistance RDS(on) at VGS=10V [DATA_NEEDED: typical RDS(on) at 10V] —
On-Resistance RDS(on) at VGS=4.5V 8.3 mOhm —
Gate Threshold Voltage (VGS(th)) 2.3 V (typ) —
Total Gate Charge (Qg) at VGS=10V 12 nC —
Input Capacitance (Ciss) 870 pF —
Output Capacitance (Coss) 290 pF —
Reverse Transfer Capacitance (Crss) 21 pF —
Rentang Suhu Kerja -55C to +150C [DATA_NEEDED: junction temperature range from datasheet]
Paket PG-VSON-6-1 (PQFN 2x2 mm) PG-THSOG-4-1 (SSO4G 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Technology OptiMOS 6 Trench —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Automotive Qualification — AEC-Q101 (per family datasheet)
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

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