ISK057N04LM6ATSA1 vs IAUCN04S7N019GATMA1 비교
다음의 상세 나란히 비교: ISK057N04LM6ATSA1 제조: Infineon 및 IAUCN04S7N019GATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUCN04S7N019GATMA1 - 40V OptiMOS 7 N-FET, 1.95 mOhm SSO4G | Infineon
IAUCN04S7N019GATMA1 ✓ 활성사양 비교
| 파라미터 | ISK057N04LM6ATSA1 | IAUCN04S7N019GATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.30 | $0.82 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Continuous Drain Current (ID) at Ta=25C | 15 A | — |
| Continuous Drain Current (ID) at Tc=25C | 64 A | — |
| Power Dissipation (PD) at Ta | 2.1 W | — |
| Power Dissipation (PD) at Tc | 39.1 W | — |
| On-Resistance RDS(on) at VGS=10V | [DATA_NEEDED: typical RDS(on) at 10V] | — |
| On-Resistance RDS(on) at VGS=4.5V | 8.3 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | — |
| Total Gate Charge (Qg) at VGS=10V | 12 nC | — |
| Input Capacitance (Ciss) | 870 pF | — |
| Output Capacitance (Coss) | 290 pF | — |
| Reverse Transfer Capacitance (Crss) | 21 pF | — |
| 동작 온도 범위 | -55C to +150C | [DATA_NEEDED: junction temperature range from datasheet] |
| 패키지 | PG-VSON-6-1 (PQFN 2x2 mm) | PG-THSOG-4-1 (SSO4G 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| RoHS 상태 | Compliant | Compliant |
| Technology | OptiMOS 6 Trench | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 |
| 트랜지스터 유형 | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Tj) | — | 147 A |
| On-Resistance RDS(on) typical | — | 1.95 mOhm |
| Maximum Power Dissipation (Tc) | — | 81 W |
| Substrate Compatibility | — | IMS substrates and legacy PCB |
| Automotive Qualification | — | AEC-Q101 (per family datasheet) |
| Lead-Free | — | Yes |
| Tape and Reel Packaging | — | Yes (per ATMA1 suffix) |