ISK057N04LM6ATSA1 vs IQE013N04LM6ATMA1 Perbandingan

Perbandingan bersamaan detil ISK057N04LM6ATSA1 dari Infineon dan IQE013N04LM6ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
ISK057N04LM6ATSA1 ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum ISK057N04LM6ATSA1 IQE013N04LM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) Max ±20 V —
Continuous Drain Current (ID) at Ta=25C 15 A —
Continuous Drain Current (ID) at Tc=25C 64 A —
Power Dissipation (PD) at Ta 2.1 W —
Power Dissipation (PD) at Tc 39.1 W —
On-Resistance RDS(on) at VGS=10V [DATA_NEEDED: typical RDS(on) at 10V] —
On-Resistance RDS(on) at VGS=4.5V 8.3 mOhm —
Gate Threshold Voltage (VGS(th)) 2.3 V (typ) 2 V (typ)
Total Gate Charge (Qg) at VGS=10V 12 nC —
Input Capacitance (Ciss) 870 pF —
Output Capacitance (Coss) 290 pF —
Reverse Transfer Capacitance (Crss) 21 pF —
Rentang Suhu Kerja -55C to +150C -55 °C to +175 °C
Paket PG-VSON-6-1 (PQFN 2x2 mm) PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down
Tipe Mounting Surface Mount Surface Mount
Status RoHS Compliant Compliant
Technology OptiMOS 6 Trench OptiMOS N-channel trench MOSFET
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (Ta) — 31 A
Continuous Drain Current (Tc) — 205 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 107 W
On-Resistance RDS(on) max — [DATA_NEEDED: RDS(on) max value at VGS=10V]
On-Resistance RDS(on) typ — 1.35 mΩ @ VGS=10 V, ID=20 A
Source-Down Topology — Yes (flip-chip die attach, drain on top thermal pad)

Spek dan Sumber

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