ISK057N04LM6ATSA1 vs IQE013N04LM6ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci ISK057N04LM6ATSA1 disebabkan oleh Infineon dan IQE013N04LM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISK057N04LM6ATSA1 ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 - 40V 64A OptiMOS 6 N-MOSFET PG-VSON-6-1

ISK057N04LM6ATSA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr ISK057N04LM6ATSA1 IQE013N04LM6ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel N-Channel
Drain-Source Voltage (VDS) 40 V 40 V
Gate-Source Voltage (VGS) Max ±20 V —
Continuous Drain Current (ID) at Ta=25C 15 A —
Continuous Drain Current (ID) at Tc=25C 64 A —
Power Dissipation (PD) at Ta 2.1 W —
Power Dissipation (PD) at Tc 39.1 W —
On-Resistance RDS(on) at VGS=10V [DATA_NEEDED: typical RDS(on) at 10V] —
On-Resistance RDS(on) at VGS=4.5V 8.3 mOhm —
Gate Threshold Voltage (VGS(th)) 2.3 V (typ) 2 V (typ)
Total Gate Charge (Qg) at VGS=10V 12 nC —
Input Capacitance (Ciss) 870 pF —
Output Capacitance (Coss) 290 pF —
Reverse Transfer Capacitance (Crss) 21 pF —
Gambaran Suhu Operasi -55C to +150C -55 °C to +175 °C
Kemasan PG-VSON-6-1 (PQFN 2x2 mm) PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant
Technology OptiMOS 6 Trench OptiMOS N-channel trench MOSFET
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (Ta) — 31 A
Continuous Drain Current (Tc) — 205 A
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 107 W
On-Resistance RDS(on) max — [DATA_NEEDED: RDS(on) max value at VGS=10V]
On-Resistance RDS(on) typ — 1.35 mΩ @ VGS=10 V, ID=20 A
Source-Down Topology — Yes (flip-chip die attach, drain on top thermal pad)

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