K4A8G165WB-BCPB vs K4A8G165WB-BCTD Perbandingan
Perbandingan bersamaan detil K4A8G165WB-BCPB dari Samsung Electronics dan K4A8G165WB-BCTD dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4A8G165WB-BCPB | K4A8G165WB-BCTD |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 512M x 16 | 512M x 16 |
| Laju Data | 2133 Mbps | 2666 Mbps |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Suhu Kerja | 0C to +85C | 0C to +85C |
| Paket | 96FBGA (TFBGA) | 96FBGA |
| Number of Terminals | 96 | — |
| Package Shape | Rectangular, bottom terminal position | — |
| Die Generation | 8Gb B-die | B-die |
| Tipe Mounting | Surface Mount | Surface Mount (BGA) |
| Antarmuka | DDR4 (synchronous, double data rate) | DDR4 (parallel, double data rate) |
| Bank Groups | DDR4 bank-group architecture | — |
| Status RoHS | Compliant (per Lisleapex listing) | Compliant (per JLCPCB listing: ROHS) |
| Refresh | [DATA_NEEDED: refresh specification] | — |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |