K4B4G1646D-BCK00 vs K4B4G1646D-BCK0 Perbandingan
Perbandingan bersamaan detil K4B4G1646D-BCK00 dari Samsung Electronics dan K4B4G1646D-BCK0 dari Samsung Electronics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646D-BCK00 | K4B4G1646D-BCK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | 4 Gb |
| Organisasi | 256M x 16 | 256M x 16 |
| Tipe Memori | DDR3L SDRAM | DDR3L SDRAM |
| Speed Grade | DDR3-1600 (800 MHz) | — |
| Laju Data | 1600 Mbps/pin | 1600 Mbps per pin |
| Tegangan Pemuat | 1.35V (1.283V to 1.45V) | — |
| I/O Voltage | 1.35V | — |
| Paket | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Suhu Kerja | 0°C to 95°C (Tcase) | 0°C to 95°C (Tc) |
| Number of Banks | 8 | 8 |
| Latensi CAS | 11 (at 1600 Mbps) | 11 (programmable) |
| Burst Length | 8, 4 (with burst chop) | 8, 4 |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Bebas Halogen | Yes | Yes |
| Clock Frequency | — | 800 MHz |
| Supply Voltage (VDD) | — | 1.35V (1.283V to 1.45V) |
| Supply Voltage (VDDQ) | — | 1.35V (1.283V to 1.45V) |