K4B4G1646D-BYK00 vs H5AN8G4NCJR-XXC Perbandingan
Perbandingan bersamaan detil K4B4G1646D-BYK00 dari Samsung Electronics dan H5AN8G4NCJR-xxC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | K4B4G1646D-BYK00 | H5AN8G4NCJR-xxC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 8Gb |
| Organisasi | 256M x 16 | x4 (H5AN8G4NCJR) |
| Laju Data | 1600 Mbps | [DATA_NEEDED: speed grade from xxC suffix] |
| Tegangan Pemuat | 1.35 V (also operates at 1.5 V) | 1.2V |
| Paket | 96-ball TFBGA | FBGA |
| Number of Terminals | 96 | — |
| Suhu Kerja | 0°C to 85°C | [DATA_NEEDED: operating temperature range] |
| Latensi CAS | Programmable | — |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Bebas Halogen | Yes | Yes |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| Tipe Mounting | — | Surface Mount |
| Prefetch | — | 8-bit |
| Burst Length | — | 8 (BL8) |
| Refresh | — | Auto-refresh and self-refresh |
| On-Die Termination | — | Yes |