K9HQGY8S5M vs K9EUGY8S0M-BCK0 Perbandingan
Perbandingan bersamaan detil K9HQGY8S5M dari Samsung Electronics dan K9EUGY8S0M-BCK0 dari Samsung Electro-Mechanics. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Samsung Electronics
K9HQGY8S5M - 3D V-NAND Flash, FBGA-316 | Samsung | SSD Storage
K9HQGY8S5M ✓ AktifSamsung Electro-Mechanics
K9EUGY8S0M-BCK0 - Samsung V-NAND Flash Memory | Samsung
K9EUGY8S0M-BCK0 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K9HQGY8S5M | K9EUGY8S0M-BCK0 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electro-Mechanics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory (stacked, client NAND) | — |
| Package Type | 316-ball Fine Pitch BGA (FBGA-316) | — |
| Die Configuration | 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) | — |
| NAND Technology | 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) | — |
| Memory Class | Non-volatile NAND flash | — |
| Antarmuka | NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] | — |
| Density | [DATA_NEEDED: total bit density] | [DATA_NEEDED: memory density] |
| Tegangan Pemuat | [DATA_NEEDED: VCC range] | [DATA_NEEDED: VCC voltage] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program/Erase Cycles | [DATA_NEEDED: P/E endurance rating] | — |
| Tipe Mounting | Surface Mount (BGA) | Surface Mount |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Level MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Original Application | Samsung SSD 850 Pro solid-state drive | — |
| Product Family | — | K9-series V-NAND Flash |
| Tipe Memori | — | NAND Flash (non-volatile) |
| Organisasi | — | [DATA_NEEDED: organization x8/x16] |
| Cell Type | — | [DATA_NEEDED: SLC/MLC/TLC/QLC] |
| VCCQ Voltage | — | [DATA_NEEDED: VCCQ voltage] |
| Access Time (tR) | — | [DATA_NEEDED: read access time] |
| Program Time (tPROG) | — | [DATA_NEEDED: program time] |
| Erase Time (tBERS) | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Paket | — | [DATA_NEEDED: package type and dimensions] |
| Packing | — | [DATA_NEEDED: tray or tape and reel] |