LMR33640ADDAR vs LMR33630CDDAR Perbandingan
Perbandingan bersamaan detil LMR33640ADDAR dari Texas Instruments dan LMR33630CDDAR dari Texas Instruments. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Texas Instruments
LMR33640ADDAR - 4A 36V Synchronous Buck Converter | Texas Instruments
LMR33640ADDAR ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | LMR33640ADDAR | LMR33630CDDAR |
|---|---|---|
| Merek | Texas Instruments | Texas Instruments |
| Kategori | DC-DC Converters | DC-DC Converters |
| Status Lingkungan Hidup | Aktif | Aktif |
| Topologi | Synchronous Buck (Step-Down) | Synchronous Step-Down (Buck) |
| Rentang Tegangan Masukan | 3.8 V to 36 V | 3.8 V to 36 V |
| Rentang Tegangan Output | 1 V to 24 V (adjustable) | 1 V to 24 V |
| Continuous Output Current | 4 A | — |
| Frekuensi Pengganti | 400 kHz (typical) | 2.1 MHz (DDA grade) |
| Quiescent Current (no load) | 76 uA (typical) | — |
| Light-Load Iq | 25 uA (typical) | — |
| Feedback Reference Accuracy | 1% (over temperature) | — |
| Control Mode | Peak current mode | Peak Current Mode with internal compensation |
| Enable Input | Precision EN (active high, with PG) | — |
| Power-Good Flag | Yes (open-drain PG) | Yes |
| Internal MOSFETs | Yes (synchronous N-channel high-side and low-side) | — |
| Internal Compensation | Yes | — |
| Suhu Hubung Kerja | -40°C to +125°C | — |
| Paket | PowerSOIC-8 (DDA) 3.90 mm body | 8-pin HSOIC EP (DDA) PowerPAD |
| Level MSL | Level-2 (per JEDEC J-STD-020) | Level-2, 260 C, 1 year |
| Functional Safety | Functional Safety-Capable (documentation available) | — |
| Status RoHS | Compliant | Compliant |
| Arus Output Maximum | — | 3 A |
| Switching Frequency Range | — | 400 kHz to 2.1 MHz |
| Quiescent Current (typ) | — | 24 uA |
| Minimum On-Time | — | [DATA_NEEDED: minimum on-time] |
| Kinerja | — | Up to >90% (load and VIN-dependent) |
| Tipe Mounting | — | Surface Mount |
| Rentang Suhu Kerja | — | -40 C to +125 C (TJ) |
| EMI | — | Ultra-low EMI design |