M29F400FT55N3F2 vs M29F800FB55M3F2 Perbandingan
Perbandingan bersamaan detil M29F400FT55N3F2 dari Micron Technology dan M29F800FB55M3F2 dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Micron Technology
M29F400FT55N3F2 - 4Mbit 5V Parallel NOR Flash 55ns | Micron
M29F400FT55N3F2 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | M29F400FT55N3F2 | M29F800FB55M3F2 |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | EEPROM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash (SLC) | NOR Flash, Parallel |
| Ukuran Memori | 4 Mbit | — |
| Organisasi | 256K x 16 | 512K x 16-bit / 1M x 8-bit |
| Antarmuka | Parallel | Parallel, Asynchronous |
| Access Time | 55 ns | 55 ns |
| Tegangan Pemuat | 5 V | — |
| Block Architecture | Top boot block | — |
| Paket | 44-SO (SOP-44) | 44-pin SO (SOIC-44) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Temperature Grade | Auto Grade 3, up to +125C (per Micron ordering code) | — |
| Compliance Suffix | F2 (RoHS-compliant, lead-free plating) | — |
| Programming Voltage | Single supply (no 12 V VPP required) | — |
| Technology | Floating-gate NOR cell, charge-pump program/erase | — |
| Max Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| Suhu Kerja | [DATA_NEEDED: min operating temperature] | -40C to +125C |
| Density | — | 8389 kbits (8 Mbit) |
| Number of Words | — | 512 k |
| Bits per Word | — | 16 bits |
| Supply Voltage (VCC) | — | 5 V |
| Boot Block Type | — | Bottom Boot Block |
| Programming | — | Embedded byte/word program algorithms |
| OTP Area | — | 64 byte |
| Automotive Qualification | — | Auto Grade 3 (temperature grade 3, +125C) |
| Packing | — | Tape & Reel (T/R) |
| Status RoHS | — | [DATA_NEEDED: RoHS status] |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |