M29F800FT55N3E2 vs M29W800FT70N3E Perbandingan
Perbandingan bersamaan detil M29F800FT55N3E2 dari Micron Technology dan M29W800FT70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29F800FT55N3E2 | M29W800FT70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Flash |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash (Parallel) |
| Memory Organization | 512K x 16 (8 Mbit) | — |
| Density | 8389 kbits | 8 Mbit |
| Access Time | 55 ns | 70 ns |
| Tegangan Pemuat | 5 V | — |
| Antarmuka | Parallel | Parallel, address/data bus |
| Boot Block Architecture | Top Boot Block | — |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Paket | 48-TSOP I | 48-TSOP I (12 x 20 mm, 0.5 mm pitch) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Word/Byte Configuration | BYTE# pin selectable (16-bit / 8-bit) | — |
| Hardware Reset / Power-Down | RP# pin | — |
| Embedded Program/Erase Controller | Yes (byte/word program, block erase) | — |
| Program/Erase Endurance | 100,000 cycles per block (typical for family) | [DATA_NEEDED: program/erase cycles] |
| Data Retention | >20 years (typical for family) | [DATA_NEEDED: data retention] |
| Ready/Busy Output | Yes | — |
| Status RoHS | Compliant (E suffix = lead-free/RoHS) | [DATA_NEEDED: RoHS status] |
| Organisasi | — | 1M x 8 / 512K x 16 |
| Supply Voltage (VCC) | — | 2.7 V to 3.6 V |
| Programming / Erase Supply | — | Single supply at VCC (2.7 V to 3.6 V) |
| Boot Block Location | — | Top boot block (FT variant) |
| Bus Width | — | 8-bit or 16-bit (BYTE pin selectable) |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Block Organization | — | [DATA_NEEDED: block size/organization] |