M29W128GH70N3E vs M29W256GH70N3E Perbandingan
Perbandingan bersamaan detil M29W128GH70N3E dari Micron Technology dan M29W256GH70N3E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | M29W128GH70N3E | M29W256GH70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | NOR Flash | NOR Flash (Parallel) |
| Ukuran Memori | 128 Mbit (16 MB) | — |
| Organisasi | 8M x 16 / 16M x 8 | 32M x 8 / 16M x 16 |
| Antarmuka | Parallel (asynchronous) | Parallel (asynchronous) |
| Access Time | 70 ns | 70 ns |
| Tegangan Pemuat | 2.7 V to 3.6 V | 3 V |
| Suhu Kerja | -40C to +125C | -40C to +125C |
| Temperature Grade | Automotive | — |
| Paket | 56-TSOP | 56-TSOP |
| Number of Terminals | 56 | — |
| Tipe Mounting | Surface Mount | Surface Mount |
| Lebar Bus Data | 16 bit (byte/word selectable) | 8/16 bit (BYTE# selectable) |
| Memory Density | 131072 kbit | — |
| Programming | Command-sequence program/erase with status polling | — |
| Application Segment | Automotive / Industrial code storage | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Program/Erase Cycles | [DATA_NEEDED: endurance] | — |
| Density | — | 256 Mbit (32 MB) |
| Programming Type | — | Command-set program/erase, block organized |
| Common Flash Interface | — | Yes (CFI) |
| Product Longevity Program | — | No (per family data) |
| Endurance | — | [DATA_NEEDED: program/erase endurance cycles] |
| Standby Current | — | [DATA_NEEDED: standby current] |