MT40A2G8AG-062E vs H5ANAG4NBJR-RDC Perbandingan
Perbandingan bersamaan detil MT40A2G8AG-062E dari Micron Technology dan H5ANAG4NBJR-RDC dari SK hynix. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | MT40A2G8AG-062E | H5ANAG4NBJR-RDC |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gbit | 16 Gb (2 GB) |
| Organisasi | 2G x 8 | 4G x 4 |
| Speed | DDR4-3200 (3200 MT/s) | — |
| Clock Frequency | 1600 MHz | — |
| Access Time (Clock Cycle Time) | 0.625 ns (tCK) | — |
| Latensi CAS | CL22 (DDR4-3200) | — |
| Access Time | 19 ns | — |
| Supply Voltage VDD | 1.2 V | 1.2 V |
| I/O Interface | POD12 (1.2 V pseudo-open drain) | — |
| VPP Voltage | 2.5 V | — |
| Number of Banks | 16 (4 bank groups x 4 banks) | — |
| Operating Temperature (AUT grade) | -40C to +95C (per Micron grade table) | — |
| Paket | 78-FBGA (7.5 x 11 mm) | 78-ball FBGA |
| Tipe Mounting | Surface Mount | Surface Mount |
| Status RoHS | Compliant | Compliant (lead-free / halogen-free per RDC suffix) |
| Die Revision | AG (current generation) | — |
| Laju Data | — | 2666 MT/s (speed bin NBJR, [DATA_NEEDED: exact MT/s confirmation from datasheet]) |
| Prefetch | — | 16n (bank group architecture) |
| Antarmuka | — | SSTL-12 |
| Fitur | — | Bank groups, CA parity, data CRC, ODT, DLL-off mode |
| Refresh | — | Self refresh, 8n refresh [DATA_NEEDED: 1x/2x/4x refresh option] |
| Operating Temperature (case) | — | -40C to +85C (industrial; extended to 95C per datasheet conditions) |
| Temperature Grade Suffix | — | RDC - industrial temperature, lead-free, halogen-free |
| VDDQ | — | 1.2 V |
| Product Family | — | SK hynix computing 16Gb DDR4 H5ANAG4(8_6)NBJR series |