RTAX1000SL-1CGS624B vs RTAX2000SL-1CGS624V Perbandingan
Perbandingan bersamaan detil RTAX1000SL-1CGS624B dari Microchip Technology dan RTAX2000SL-1CGS624V dari Microsemi. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Microchip Technology
RTAX1000SL-1CGS624B - Rad-Tolerant FPGA 1M Gates | Microchip
RTAX1000SL-1CGS624B ✓ AktifMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | RTAX1000SL-1CGS624B | RTAX2000SL-1CGS624V |
|---|---|---|
| Merek | Microchip Technology | Microsemi |
| Kategori | FPGA & CPLD | FPGA & CPLD |
| Status Lingkungan Hidup | Aktif | Aktif |
| Logic Density | 1,000,000 equivalent system gates | — |
| ASIC Gates | 125,000 additional ASIC gates | — |
| Configurable Logic Blocks (CLBs) | 12096 | — |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Series | RTAX1000SL | — |
| Speed Grade | -1 | -1 |
| Technology | Digital CMOS | Digital CMOS, antifuse nonvolatile |
| Programming Technology | Anti-fuse (one-time programmable, live at power-up) | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC |
| Paket | 624-ball Ceramic CGA (CGS624) | 624-ball ceramic CGA (CGS624) |
| Tipe Mounting | Surface Mount | Surface Mount |
| Radiation Tolerance | Radiation-tolerant (space flight qualified) | — |
| Qualification | DLA SMD 5962-0422006QUA per MIL-PRF-38535 | — |
| Suhu Kerja | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Tegangan Pemuat | [DATA_NEEDED: core/IO supply voltage] | — |
| Maximum User I/O | [DATA_NEEDED: maximum user I/O count] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | — |
| Architecture Base | Derived from Microsemi commercial Axcelerator family | — |
| Equivalent System Gates | — | 2000000 |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| Core Supply Voltage | — | [DATA_NEEDED: core supply voltage] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Configuration | — | One-time programmable (OTP), live at power-up, single chip |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |