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IR2128STRPBF - 600V High-Side Gate Driver IC | Infineon
Infineon IR2128STRPBF is a 600 V single-channel high-side gate driver IC for IGBTs and MOSFETs, delivering 0.25 A source and 0.5 A sink drive currents in an 8-pin SOIC (0.154", 3.90 mm width) package. It operates from a 12 V to 20 V gate-drive supply with logic input compatible with 3.3 V CMOS/LSTTL. Per the Infineon datasheet, the part is fully operational to +600 V with dV/dt immunity and tolerates negative transient voltages at the VS node. The IR2128STRPBF includes over-current protection with a current-sense comparator and an open-drain fault output, simplifying protection implementation in motor-control and power-conversion designs. A high-side gate driver is a specialized power-management IC that level-shifts a low-voltage logic signal up to a floating high-voltage rail, allowing a low-side controller (such as a 3.3 V MCU) to switch an N-channel power MOSFET or IGBT placed on the high side of a half-bridge. High-side drivers sit inside the broader hierarchy of gate drivers -> power management ICs -> PMIC -> semiconductor, and they are indispensable in bridge-tied converters, three-phase inverters, and any topology where the low-side switch cannot deliver the required load current or voltage swing. Bootstrap supply architecture, used by the IR2128STRPBF, lets a single supply rail feed both low-side and high-side switch gates without a dedicated isolated DC/DC converter. Key features include a 200 ns typical propagation delay, integrated undervoltage lockout (UVLO) for the logic and gate-drive rails, current-sense comparator with programmable threshold, and a fault indicator output that pulls low to flag over-current events to the host controller. The CMOS/HVIC latch-immune process gives the IC monolithic robustness against dv/dt-induced false triggering on the high-side return (VS) node. Typical applications include general-purpose variable-frequency drives (VFD), IGBT/MOSFET modules in industrial inverters, three-phase induction-motor half-bridges (one IR2128STRPBF per phase), DC-DC buck/boost converters with high-side synchronous rectifiers, and switched-mode power supplies (SMPS) needing a single high-side switch. The 600 V rating covers 230 VAC and 400 VAC rectified rails with ample margin. Design considerations: keep the bootstrap diode and capacitor close to the VB-VS pins to minimize charge transients; a 1N4148 plus 1 uF ceramic cap is typical. Verify the VS-node dv/dt does not exceed the dV/dt rating during commutation, otherwise the floating-well can inject shoot-through. The current-sense resistor and RC filter at the CS pin set the over-current trip threshold.
IR2130SPBF - 3-Phase Bridge Driver, 600V, 28-SOIC | Infineon
The Infineon IR2130SPBF is a high-voltage, high-speed 3-phase bridge gate driver IC delivering 500 mA source/sink drive current for power MOSFETs and IGBTs, housed in a 28-pin SOIC package. It integrates three independent high-side and three low-side referenced output channels, proprietary HVIC technology, and a ground-referenced operational amplifier for analog feedback of bridge current. A gate driver is a power-management integrated circuit that sits between a low-power control MCU/DSP and the high-current gate of a power switch (MOSFET or IGBT). It provides level shifting, voltage translation, and current amplification so a 3.3 V or 5 V logic signal can efficiently switch a 600 V half-bridge. The IR2130SPBF belongs to the half-bridge / 3-phase driver family within power management ICs (HVIC -> gate driver -> motor driver -> power management IC). This category enables compact, reliable inverters by eliminating the optocouplers and discrete bootstrap networks that older designs required. Key features of the IR2130SPBF include 600 V maximum offset voltage on the high-side channels, 10 V to 20 V supply range, CMOS/LSTTL-compatible logic inputs down to 2.5 V, integrated deadtime control, and over-current protection with fault reporting via the FAULT and RCIN pins. The integrated current-sense op-amp removes the need for an external amplifier in most motor-drive feedback loops. Under-voltage lockout (UVLO) for both VCC and VBS protects the power switches from insufficient gate-drive voltage. Architecturally, the IR2130SPBF uses Infineon's proprietary HVIC process to integrate level-shifting high-side drivers with low-side drivers on a single die, supporting switching frequencies up to several hundred kHz. Propagation delays are tightly matched between channels (~425 ns typical per the datasheet overview), which is essential for 3-phase PWM to avoid circulating currents and torque ripple. Typical applications include 3-phase variable-frequency drives (VFDs) for AC induction motors, brushless DC (BLDC) and permanent-magnet synchronous motor (PMSM) controllers, industrial servo amplifiers, uninterruptible power supplies (UPS), and appliance motor control. The wide supply range and integrated fault protection also suit solar micro-inverters and small EV traction auxiliaries. When designing with the IR2130SPBF, careful attention to bootstrap capacitor selection and PCB layout is critical - high-side channels float with the phase output, so the dV/dt immunity and the bootstrap refresh interval determine long-term reliability. Avoid routing the FAULT/RCIN traces near switching nodes to prevent false tripping. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers an actionable selection reference for 3-phase motor-drive designs.
IR2130STRPBF - 600V 3-Phase Gate Driver | Infineon | SOIC-28
The Infineon IR2130STRPBF is a 600 V high-voltage, high-speed three-phase gate driver IC for power MOSFETs and IGBTs, housed in a 28-pin SOIC Wide-Body (SOIC-28WB) package. It integrates three independent high-side and three independent low-side driver channels with typical 0.25 A source and 0.5 A sink gate-drive currents, and operates from a gate-drive supply (VCC) of 10 V to 20 V with logic inputs compatible with CMOS/LSTTL down to 2.5 V. A gate driver IC is a power-management semiconductor that level-shifts low-voltage control logic signals to the high-voltage domain required to switch the gates of power MOSFETs or IGBTs in bridge topologies. In the broader system taxonomy, the IR2130 belongs to the gate driver IC family, which sits hierarchically below power management ICs and above discrete half-bridge driver circuits; it is the critical interface between a microcontroller/MCU's PWM outputs and the high-current switching stage of motor drives, inverters, and SMPS. The IR2130STRPBF uses Infineon's proprietary HVIC (High-Voltage Integrated Circuit) technology, enabling a ruggedized monolithic construction fully operational to +600 V and tolerant to negative transient voltages on the phase node (dV/dt immune). It includes undervoltage lockout (UVLO) for all six channels, matched propagation delays across all channels for symmetric switching, a typical dead-time of 2.5 microseconds, and over-current shutdown that turns off all six outputs simultaneously while asserting a fault flag. An integrated ground-referenced operational amplifier provides analog feedback of bridge current through an external sense resistor. Typical applications include three-phase variable-frequency drives (VFDs) for AC induction and PMSM motors, brushless DC (BLDC) motor controllers in appliances, industrial servo drives, uninterruptible power supplies (UPS), and solar inverters. The wide 600 V rating also supports off-line industrial power conversion at 220-240 VAC rectified input. When designing with the IR2130STRPBF, always use bootstrap capacitors on each high-side channel and a dedicated bootstrap diode rated for at least the full DC bus voltage; bootstrap capacitor sizing should target a ripple of less than 10% of VCC under worst-case duty-cycle and switching conditions to prevent UVLO tripping. The current-sense op-amp output should be filtered to reject switching noise. This page synthesizes distributor pricing from DigiKey/Mouser, drop-in alternatives from the IR2130 family and competing gate-driver ICs, and practical design notes that go beyond the manufacturer datasheet.
IR2132SPBF - 600V 3-Phase Half-Bridge Gate Driver | Infineon
The Infineon IR2132SPBF is a 600 V, three-phase half-bridge gate driver IC housed in a 28-pin SOIC wide-body (SOIC-W) package, designed to drive N-channel power MOSFETs or IGBTs in three-phase bridge configurations. The device integrates six gate drive channels (three high-side floating, three low-side referenced) with 0.5 A source/sink drive capability, deadtime insertion, and undervoltage lockout (UVLO) protection for all six channels, delivering a single-IC solution for motor drive and inverter power stages. A gate driver is a power-conversion support IC that translates low-power logic-level PWM signals from a microcontroller or DSP into high-current gate-drive pulses capable of rapidly switching the gates of high-voltage MOSFETs or IGBTs. Within the power-management hierarchy, gate drivers sit one level above the switching transistors and one level below the control IC, providing the current amplification, level shifting, and isolation (in the high-side floating channels) required to operate a half-bridge or full-bridge topology. The IR2132SPBF uses Infineon's proprietary HVIC (high-voltage integrated circuit) process, which monolithically integrates the high-voltage level-shift stage with low-voltage CMOS logic on a single die. Key features include 600 V maximum offset voltage on the high-side floating channels, a gate-drive supply range of 10 V to 20 V, dV/dt immunity, tolerance to negative transient voltage on VS pins, and a typical deadtime of 0.8 us to prevent cross-conduction in the half-bridge legs. Logic inputs are CMOS/LSTTL compatible down to 2.5 V logic. The 'inverting' input variant means that a logic-high on HINx/LINx produces a logic-low on the corresponding gate output (HO/LO), simplifying logic inversion in some PWM schemes. Typical applications include three-phase variable-frequency drives (VFDs) for induction and BLDC motors, servo amplifiers, HVAC compressors, industrial pump drives, and uninterruptible power supplies (UPS). The wide-body SOIC-28 footprint is the industry-standard pinout for this driver family, which simplifies PCB layout and second-sourcing. The SPBF suffix indicates lead-free (PbF), RoHS-compliant, and tube packaging per Infineon's ordering nomenclature. When designing with the IR2132SPBF, use a bootstrap diode and capacitor on each high-side supply (VBx-VSx) sized to refresh the floating supply during the low-side on-time; 1 uF to 4.7 uF ceramic X7R capacitors are typical. Place the bootstrap diode close to the VB pin and use a low-ESR ceramic bypass on VCC. This page synthesizes distributor pricing, parametric comparison with sibling drivers, and practical bootstrap-design guidance not collected in the manufacturer datasheet alone.
IR2132STRPBF - 600V 3-Phase Gate Driver IC | Infineon
The Infineon IR2132STRPBF is a 600 V three-phase gate driver IC with integrated over-current protection, an operational amplifier, and fault reporting, housed in a 28-lead SOICWB (wide-body) surface-mount package. It features typical 0.25 A source and 0.5 A sink gate-drive currents, a 10 V to 20 V gate-drive supply range, and a 675 ns typical propagation delay. The IR2132STRPBF is rated for fully operational +600 V offset voltage and is tolerant to negative transient voltage with dV/dt immunity. A three-phase gate driver IC belongs to the broader category of gate drivers within the power management and motor-control semiconductor family. Gate drivers sit between low-power control logic (such as a microcontroller PWM output) and the high-power discrete switches (IGBTs or power MOSFETs) that actually commutate current in a motor or inverter. The three-phase topology specifically targets brushless DC (BLDC) and permanent-magnet synchronous motor (PMSM) drives, where six switches arranged in three half-bridges must be sequenced 120 electrical degrees apart. By integrating six gate-drive channels plus protection and an op-amp onto a single high-voltage die, the IR2132STRPBF eliminates dozens of discrete components and shrinks the inverter footprint. Key features include floating-channel bootstrap architecture that allows the high-side drivers to operate up to 600 V without an isolated supply, undervoltage lockout (UVLO) on all six channels that protects the power stage from insufficient gate-drive voltage, a current-sense op-amp that conditions shunt-resistor feedback for over-current protection, and a FAULT output that latches during a desaturation or OC event. The dead-time is internally fixed at approximately 0.8 µs to prevent shoot-through in the half-bridge. The 28-SOICWB package exposes a thermal pad for improved heat dissipation during continuous switching. Typical applications span industrial variable-frequency drives (VFDs), BLDC/PMSM motor controllers for appliances and pumps, uninterruptible power supplies (UPS), solar micro-inverters, and three-phase AC induction drives. With the global push toward electrification in HVAC, e-mobility, and factory automation, the IR2132STRPBF remains a workhorse part in the 600 V class. When designing with the IR2132STRPBF, observe the bootstrap-capacitor sizing rule that the bootstrap cap must recharge the high-side supply within every switching cycle - typically a 1 µF or larger ceramic is required for motor-PWM frequencies above 15 kHz. Place the VSS bypass capacitor directly between the VSO pin and the COM pin to keep the current-sense path quiet, and keep the OC-trip filter network close to the ITRIP pin to avoid false triggering from switching noise. This page synthesizes distributor pricing, drop-in same-brand and cross-brand alternatives, and practical design notes that complement - but do not replace - the manufacturer datasheet.
IR21531DPBF - 600V Half-Bridge Gate Driver, 8-PDIP | Infineon
The Infineon IR21531DPBF is a 600 V self-oscillating half-bridge gate driver IC housed in an 8-pin PDIP through-hole package, integrating a high-voltage half-bridge driver with a CMOS 555-style front-end oscillator. It is a functional upgrade to the legacy IR2155/IR2151 gate drivers, offering tightened initial deadtime, a low temperature-coefficient deadtime, an integrated 15.6 V Vcc zener clamp, and true micropower startup. The device targets offline ballast and SMPS half-bridge topologies where one IC must generate both gate timing and level-shifted gate drive. A half-bridge gate driver is a power-management IC that produces two complementary gate-drive signals (high-side referenced to the switching node and low-side referenced to ground) for a pair of power MOSFETs or IGBTs arranged in a totem-pole half-bridge. Within the broader taxonomy, the IR21531DPBF sits in the gate-driver subcategory of power management ICs, above which are MOSFET/IGBT drivers, then switching power supply controllers. Its built-in oscillator means the half-bridge timing is set by a single external RT/CT pair, eliminating the need for a separate PWM controller. Key specifications include a 600 V half-bridge rating (allowing direct operation from rectified 230 V AC), typical 0.6 µs internal deadtime, a programmable oscillator, an SD (shutdown) function on the CT pin at 1/6 Vcc, increased undervoltage lockout hysteresis, and matched propagation delays for the high-side and low-side outputs. The exposed GND pin supports the high peak gate currents required to switch MOSFETs in the tens-of-nanoseconds transition region. The architecture is built on Infineon's high-voltage junction-isolation process, which integrates a 600 V level-shift structure on the same die as the 555-style oscillator. This monolithic integration reduces BOM count versus discrete driver + PWM designs and improves timing symmetry between the high-side and low-side channels, which directly lowers shoot-through risk in the half bridge. Typical applications include fluorescent and HID electronic ballasts, low-power SMPS half-bridge converters, CCFL backlight inverters for displays, and motor-drive half-bridge stages. The 600 V rating allows direct rectification of 230 V AC without an additional bootstrap-clamp circuit, and the 1/6 Vcc shutdown input provides an easy interface to a fault or timer circuit. When designing with this part, place a 100 nF (minimum) ceramic bypass capacitor directly on Vcc to keep the internal 15.6 V zener from absorbing fast switching transients, and select RT/CT to give an oscillator frequency well above the audible band (>20 kHz) for ballast applications. The bootstrap diode and capacitor must be sized for the worst-case high-side on-time per switching cycle. This page synthesizes distributor pricing, parametric drop-in alternatives, and PCB-oriented design notes that complement the manufacturer datasheet rather than repeating its tables.
IR21531STRPBF - 600V Self-Oscillating Half-Bridge Driver | Infineon
The Infineon IR21531STRPBF is a 600V self-oscillating half-bridge gate driver IC in an 8-pin SOIC package, designed to drive two N-channel MOSFETs or IGBTs in a half-bridge topology with integrated dead-time control. It features a programmable oscillator frequency set by an external RC network, a high-voltage level-shift stage tolerant of up to 600V on the high-side, a 15.6V internal clamp on VCC, and a 0.6 microsecond built-in dead-time to prevent shoot-through. The integrated bootstrap diode simplifies the high-side supply generation, requiring only an external bootstrap capacitor. A half-bridge gate driver is a power-management IC that converts low-voltage PWM or oscillator logic into two complementary high-current gate-drive signals capable of switching the high-side and low-side switches of a half-bridge. This category sits hierarchically under gate driver -> driver IC -> power management IC -> semiconductor. The self-oscillating variant integrates the timing function, removing the need for an external controller in simple topologies such as electronic ballasts, small motor drivers, and resonant converters. Key features include a 10V to 20V VCC supply range with internal 15.6V zener clamp, source/sink gate-drive currents of approximately 250 mA peak, matched propagation delays for symmetric switching, and CMOS Schmitt-triggered logic input. The internal bootstrap FET and dead-time generator reduce external component count to as few as a resistor, capacitor, and bootstrap capacitor. The 8-pin SOIC surface-mount package offers a small footprint suitable for high-density ballast and driver designs. Internally the device uses a high-voltage junction-isolation level-shifter to translate the low-side oscillator signal across the floating high-side supply rail. This architecture delivers robust high-side switching up to 600V while keeping the logic interface referenced to ground. The matched delay paths ensure balanced turn-on/turn-off timing, which directly translates into low dead-time distortion and predictable EMI behavior in the converter. Typical applications include HID and fluorescent electronic ballasts, DC-DC converters, motor driver half-bridges, class-D audio amplifiers, and any low-to-medium power half-bridge requiring a self-contained oscillator and driver. The Pb-free suffix indicates compliance with lead-free process and RoHS directives. When designing with the IR21531STRPBF, ensure the bootstrap capacitor is sized to refresh the high-side supply within the oscillator period, and verify that the switching frequency stays below the device's maximum capability to allow sufficient bootstrap recharge time. The RC timing components set the operating frequency, so 1% tolerance parts are recommended for accurate frequency control. This page synthesizes distributor pricing, drop-in alternatives in the SOIC-8 footprint, and practical design notes not collected in a single location in the manufacturer datasheet.
IR2153PBF - 600V Half-Bridge Gate Driver | Infineon
The Infineon IR2153PBF is a 600V self-oscillating half-bridge gate driver IC housed in an 8-pin PDIP through-hole package, integrating a high-voltage gate driver with a front-end RC oscillator similar to the industry-standard CMOS 555 timer. It delivers gate drive currents with 45 ns typical rise time and 80 ns typical fall time, supporting switching frequencies set by external RT/CT components from DC up to approximately 100 kHz. The device targets low- and medium-power MOSFET and IGBT half-bridge topologies where a compact self-contained driver replaces discrete oscillator + bootstrap + level-shift designs. A half-bridge gate driver is a power-management IC that produces two complementary gate-drive signals (HO and LO) referenced to a switching node (VS) and ground, enabling control of a high-side and low-side power switch in a totem-pole or full-bridge arrangement. The half-bridge driver family belongs to the broader gate-driver IC category, which sits under power management ICs and ultimately under power semiconductors. Compared to low-side-only drivers, half-bridge drivers add a high-voltage level-shifter and bootstrap mechanism that lets the high-side switch be driven when its source sits at the bus voltage. The IR2153PBF extends this with a built-in oscillator, eliminating external PWM generation hardware. Key features include integrated 600V half-bridge gate driver, 15.6V zener clamp on VCC, micropower startup, tighter initial deadtime control with a low temperature coefficient, shutdown feature (1/6th VCC) on the CT pin, and increased undervoltage lockout (UVLO) thresholds. The internal deadtime and shoot-through protection logic prevent simultaneous conduction of the high-side and low-side MOSFETs. Two output channels source and sink gate charge, producing clean edges on MOSFET gates even at moderate load currents. Architecturally, the IR2153PBF combines a CMOS 555-style oscillator, an internal bootstrap diode-equivalent level shifter, and high-side / low-side driver buffers rated to 600V. The 15.6V zener clamp on VCC protects the gate driver supply rail from transients, while the micropower startup reduces quiescent current to about 500 uA. The internal deadtime control is tightly toleranced to minimize shoot-through and improve efficiency across operating temperature. Typical applications include fluorescent lamp ballasts, HID ballasts, switch-mode power supplies (SMPS), motor drivers for small brushless DC fans and pumps, electronic transformers for halogen lighting, and other low-power half-bridge converter topologies. The wide VCC range (10V to 15.6V clamped) makes it compatible with standard 12V and 15V auxiliary rails. When designing with the IR2153PBF, place RT and CT close to the IC pins to minimize timing jitter, and use a low-ESR bypass capacitor on VCC. The bootstrap diode and capacitor values must be sized for the maximum high-side on-time to avoid UVLO triggering; Infineon recommends a fast-recovery bootstrap diode for high-frequency operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
IR2153SPBF - 600V Self-Oscillating Half-Bridge Driver | Infineon
The Infineon IR2153SPBF is a 600 V self-oscillating half-bridge gate driver IC housed in an 8-pin SOIC (S) package with an integrated front-end oscillator similar to the industry-standard CMOS 555 timer. It combines a high-voltage half-bridge gate driver with programmable deadtime, a shutdown feature on the CT pin, and 15.6 V internal clamp on the gate drive supply, delivering the same timing-resistor-and-capacitor programming familiar to designers of classic 555-timer based SMPS half-bridge front ends. A half-bridge gate driver IC is a power-management building block that drives the high-side and low-side MOSFETs (or IGBTs) of a half-bridge converter from a single low-voltage control input. The IR2153 is part of the broader gate-driver hierarchy: gate driver -> half-bridge driver -> high-voltage gate driver -> power management IC -> semiconductor. Its self-oscillating topology places it in the SMPS controller family, where timing RT/CT sets the switching frequency and the internal logic adds the programmable deadtime needed to prevent shoot-through. Key features include 600 V offset voltage tolerance on the high-side channel, 15.6 V gate-clamp for protecting logic-level MOSFETs, programmable oscillator frequency through external RT and CT, internal deadtime control, and a CT-pin shutdown that disables both gate outputs with a logic-low signal. The internal bootstrap structure requires only a single low-voltage supply, simplifying PCB layout and reducing external component count compared with discrete half-bridge implementations. The architecture uses a CMOS 555-style oscillator feeding a high-side level shifter and a low-side driver, with both channels rated for negative transients on the switching node. This makes the part tolerant of the harsh dv/dt environment typical of half-bridge converters, and the integrated bootstrap diode (on the 'D' variant) further reduces BOM count. The RC input circuit category identifies it as programmable-timing, not fixed-frequency or PWM-controlled by an external MCU. Typical applications include self-oscillating half-bridge converters for electronic ballasts, switch-mode power supplies under 200 W, electronic transformers for halogen lamp replacement, and motor-driver front ends. The shutdown pin makes it suitable for ballast protection circuits that need to disable both gates on lamp removal. The 8-SOIC footprint is pin-compatible with other 8-pin gate drivers in the IR215x family. When designing, keep the high-side bootstrap diode external on the standard S-variant (the IR2153DPbF has the internal diode), select RT and CT to program the frequency per the datasheet curves, and verify deadtime meets the MOSFET turn-off specification. Layout should keep the CT pin trace short to avoid noise injection that can false-trigger shutdown. This page synthesizes distributor pricing for the IR2153SPBF, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select, source, and qualify the part quickly.
IR2153STRPBF - 600V Self-Oscillating Half-Bridge Driver | Infineon
The Infineon IR2153STRPBF is a self-oscillating 600 V half-bridge gate driver IC with integrated bootstrap functionality, housed in an 8-pin SOIC package. It combines a fixed-frequency oscillator, a programmable deadtime control, and high-side/low-side gate drive channels rated to 600 V. Per the manufacturer datasheet, the device targets driving IGBTs and MOSFETs in offline power conversion topologies such as SMPS ballasts, motor drives, and half-bridge converters. A gate driver IC is a power-management semiconductor that translates low-power logic-level PWM commands from a controller into the high-current, high-voltage signals required to switch the gate of a discrete power MOSFET or IGBT. Half-bridge drivers specifically produce two complementary outputs (high-side and low-side) to drive a totem-pole arrangement of switches, which forms the basic building block of half-bridge, full-bridge, and Class-D switching topologies. The IR2153 sits in the hierarchy: gate driver IC -> half-bridge driver -> bootstrap driver -> high-voltage driver IC -> power management semiconductor. Key features include a 600 V absolute maximum offset voltage on the high-side channel, integrated 15.6 V Vcc zener clamp, micropower startup (typical quiescent current under 100 uA from VCC), programmable oscillator frequency via external RT/CT, and tighter initial deadtime control for symmetric switching. The internal bootstrap MOSFET eliminates an external discrete, simplifying PCB layout. Compared to the older IR2151, the IR2153 adds a shutdown feature (1/6 VCC on CT pin) and increased UVLO hysteresis of 1 V. Technically, the IR2153 uses a high-voltage level-shift circuit to translate the low-side ground-referenced logic into the floating high-side domain. Its deadtime is generated by the CT pin discharge slope and an internal threshold, giving predictable cross-conduction protection. The architecture is bipolar CMOS-DMOS (BCD) and is specified for -40C to +125C operation. For new designs, Infineon recommends the IRS2153D successor. Typical applications include electronic ballasts for fluorescent and HID lamps, half-bridge and push-pull converters, Class-D audio amplifiers, small motor drivers, and any low-to-medium power offline switching supply where a self-oscillating topology eliminates the need for an external controller IC. When designing with the IR2153, ensure the bootstrap capacitor (typically 100 nF to 1 uF ceramic) and supply bypass are placed close to the IC. Verify that the high-side floating supply voltage (VB-VS) stays above the UVLO threshold during the minimum high-side on-time to avoid high-side turn-off. This page synthesizes distributor pricing across 7+ sources, drop-in alternatives in the same 8-SOIC footprint, and practical design notes that supplement the manufacturer datasheet.
IR2156STRPBF - 600V Ballast Control IC, 14-SOIC | Infineon
The Infineon IR2156STRPBF is a fully integrated ballast controller and 600V half-bridge gate driver housed in a 14-pin SOIC (0.154", 3.90 mm width) package. It targets fluorescent lamp ballast applications with an internal bootstrap MOSFET, programmable preheat frequency, programmable preheat time, internal ignition ramp, programmable over-current threshold, programmable run frequency, and programmable dead time, operating over a supply range of 11.5 V to 15.6 V with an internal 15.6 V zener clamp diode on VCC. What is a ballast controller? A ballast controller is a specialized power management IC that drives the half-bridge power stage of a fluorescent or HID lamp ballast. It manages the lamp's life cycle across preheat, ignition, and run phases while enforcing protection thresholds. Within the broader taxonomy, a ballast controller belongs to gate drivers -> driver ICs -> power management ICs -> semiconductor devices, and it is the central control element in any electronically ballasted lamp. Key features include a 36 kHz to 44 kHz programmable oscillator range, 1 mA typical quiescent supply current, internal 15.6 V zener clamp on VCC, DC-bus under-voltage reset with hysteresis, shutdown pin with hysteresis, and over-current fault protection on the CS pin. The high-side driver tolerates up to 600 V offset, allowing direct connection to the half-bridge switching node without external level-shift circuitry. The IC integrates a high-voltage half-bridge driver with low-side and high-side gate outputs that switch external power MOSFETs or IGBTs at the resonant tank frequency. The bootstrap circuit supplies the high-side gate, simplifying PCB layout and reducing external component count compared to discrete gate-drive solutions. The internal ignition ramp and programmable preheat/run sequencing are tuned by external resistor-capacitor networks at dedicated timing pins. Typical applications include T8/T5/T12 fluorescent lamp ballasts, compact fluorescent lamp (CFL) ballasts, high-intensity discharge (HID) lamp ballasts, and electronic transformers for halogen lighting. The wide 600 V high-side offset allows use on universal AC mains (90 VAC to 265 VAC) when paired with a PFC front-end. When designing with this device, decouple VCC with a low-ESR ceramic or electrolytic capacitor placed close to the VCC pin, and size the bootstrap diode and capacitor according to the high-side switching frequency to keep the bootstrap refresh within the dead-time window. Program CS threshold via Rcs to limit fault current in non-strike or open-filament conditions. This page synthesizes distributor pricing, drop-in alternatives, and practical ballast design notes not found in the manufacturer datasheet alone, including cross-brand equivalents and parametric comparison data for engineers evaluating second-source options.
IR2175STRPBF - 600V Linear Current Sense IC, 8-SOIC | Infineon
The Infineon IR2175STRPBF is a high-voltage monolithic linear current sensing IC housed in an 8-pin SOIC package, designed to measure phase current through an external shunt resistor in motor-drive and power-conversion systems. It accepts a differential input of ±260 mV across the shunt, integrates a floating high-side channel capable of operating up to +600 V common-mode, and delivers a digital PWM output proportional to load current for direct microcontroller interface. A current sense regulator (also called a linear current sensing IC) is a category of power-management IC that converts a small analog shunt voltage into an isolated, scaled, and noise-immune representation of load current. These ICs sit in the signal chain between a low-side shunt resistor and the controller, providing galvanic isolation between the power stage and logic. The IR2175 family belongs to Infineon's high-voltage gate-driver and sensor portfolio, positioned above simple op-amp current shunts and below isolated delta-sigma modulators. Key features include 9.5 V to 20 V low-side supply (VCC), 13 V to 20 V high-side floating supply (VB), 2 mA quiescent current on the bootstrap rail (IQBS), 20 mA output current capability, 130 kHz typical PWM output frequency, and ±260 mV input common-mode range with 20 ppm/°C gain temperature drift. An independent fast overcurrent trip signal activates within 2 µs typical delay when the input threshold is exceeded, providing hardware-level short-circuit protection independent of the PWM feedback path. Architecturally, the IR2175 combines a high-side differential amplifier with an internal level shifter, allowing the low-voltage DSP or MCU to read high-side phase current without external isolation. The monolithic integration of the floating channel eliminates optocoupler drift and propagation delay, supporting high-bandwidth FOC (field-oriented control) loops in variable-frequency drives. Typical applications include three-phase motor drives, HVAC compressors, industrial servo amplifiers, and EV traction inverters. The wide 600 V floating-channel range covers 230 V and 480 V rectified bus voltages with substantial headroom. Designers select the IR2175 when they need a simple, low-BOM current-feedback path for variable-speed drives. Designers should size the external shunt to keep peak current below ±260 mV, observe PCB creepage/clearance for the floating pins, and provide adequate bootstrap capacitance to sustain the high-side supply. Compared to discrete op-amp solutions, the IR2175 reduces part count and eliminates calibration of the gain drift. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping procurement and firmware teams select, source, and validate a 600 V current-sense IC in a single document.
IR21814STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR21814STRPBF is a 600V high-voltage half-bridge gate driver IC with independent high-side and low-side referenced output channels, housed in a 14-pin SOIC package. The device delivers 1.9A typical source and 2.3A typical sink peak gate drive currents using proprietary HVIC and latch-immune CMOS technologies that enable ruggedized monolithic construction. It operates with a gate drive supply range from 10V to 20V and features an integrated bootstrap diode and undervoltage lockout for both high-side and low-side channels. A half-bridge gate driver is a power management IC that controls one high-side and one low-side MOSFET or IGBT in a totem-pole configuration, translating low-voltage PWM logic signals into the high-voltage, high-current drive required to switch the power devices efficiently. Within the broader taxonomy, gate drivers sit between microcontrollers/MOSFET gate resistors and the discrete power switches themselves in the signal chain. The half-bridge topology is the foundational building block of DC motor drives, Class D audio amplifiers, and switched-mode power supplies. Key features include 3.3V logic compatibility on inputs, dV/dt immunity, and tolerance to negative transient voltages on the VS pin - critical for motor drive and PFC applications where inductive kickback is common. The deadtime is internally fixed at approximately 500ns, preventing shoot-through between the high-side and low-side outputs. The integrated bootstrap switch simplifies the bill of materials by eliminating the need for an external bootstrap diode in lower-power designs. The IR21814STRPBF utilizes Infineon's high-voltage junction-isolation (HVIC) process combined with CMOS input logic, allowing the high-side channel to level-shift signals up to 600V with minimal propagation delay. Typical propagation delay is around 180ns, with matched channel-to-channel delay to keep timing skew manageable in high-frequency switching designs. The latch-immune CMOS construction ensures stable operation in noisy industrial environments. Typical applications include three-phase motor drive inverters when paired with three IR21814STRPBF devices, Class D audio amplifiers, switching-mode power supplies (SMPS), high-side buck converters, and uninterruptible power supplies (UPS). The 600V rating makes it suitable for 230V/400V AC line rectification-fed bridge circuits. The independent input structure also supports asymmetric drive schemes for synchronous rectifiers. When designing with this part, the bootstrap capacitor value must be sized for the gate charge of the driven MOSFET at the chosen switching frequency. Undervoltage lockout thresholds at approximately 8.2V (rising) and 7.5V (falling) for VCC must be observed to prevent partial enhancement of the power switches during low-voltage transients. This page synthesizes distributor pricing, drop-in alternatives from the Infineon gate-driver family, and practical design notes not found in the standalone manufacturer datasheet.
IR2181SPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR2181SPBF is a high-voltage, high-speed power MOSFET and IGBT half-bridge gate driver with independent high-side and low-side referenced output channels, housed in an 8-pin SOIC (SO-8) package. It delivers typical 1.9 A source and 2.3 A sink gate-drive currents, supports logic-level inputs down to 3.3 V, and operates with a gate-drive supply range of 10 V to 20 V. The driver is fully operational to +600 V on the high-side bootstrap section. A gate driver IC is a power-management component that translates low-current PWM logic signals from a microcontroller or DSP into the high-current gate-drive signals required to switch power MOSFETs or IGBTs. Half-bridge gate drivers specifically drive the high-side and low-side switches of a half-bridge, providing the level-shifting needed to reference the high-side gate to the switching node. Within the broader taxonomy, the IR2181 belongs to gate drivers -> driver ICs -> power management ICs -> semiconductors, and uses Infineon's proprietary HVIC (High-Voltage Integrated Circuit) and latch-immune CMOS technologies for rugged monolithic construction. Key features include dV/dt immunity, undervoltage lockout (UVLO) for both the high-side and low-side channels, a separate logic supply range from 3.3 V to 20 V, and tolerance to negative transient voltages on the high-side return (VS pin). The matched propagation delay between high-side and low-side channels (typically ~140 ns) and the small 8-SOIC footprint make the IR2181SPBF well-suited to compact motor-drive and SMPS designs where board area and switching timing symmetry are critical. The architecture combines a level-shifted high-side channel driven from a bootstrap capacitor with a ground-referenced low-side channel. The high-side channel can float up to 600 V above ground, while the integrated deadtime logic and the matched propagation delays protect against cross-conduction in the half-bridge. This monolithic HVIC construction removes the need for an isolated DC-DC converter for the high-side gate drive, reducing BOM cost and PCB area. Typical applications include three-phase and single-phase motor drives (variable-frequency drives, HVAC compressors, small appliances), switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), half-bridge and full-bridge DC-DC converters, and Class-D audio amplifiers. The 3.3 V logic compatibility allows direct interfacing with low-voltage microcontrollers, removing the need for a logic-level translator. When designing with the IR2181SPBF, observe the bootstrap capacitor selection and refresh requirements for the high-side supply (VB-VS). An undersized bootstrap capacitor causes excessive ripple on VB and may trigger UVLO under high duty cycle or low-frequency operation. Use a low-ESR ceramic bypass capacitor close to the VCC and VB pins to keep the gate-drive rail stable under high peak currents. This page synthesizes distributor pricing, drop-in alternatives from Infineon and competitor lines, and practical design notes not found in the manufacturer datasheet alone.
IR2181STRPBF - 600V Half-Bridge Gate Driver 1.9A/2.3A | Infineon
The Infineon IR2181STRPBF is a 600V half-bridge gate driver IC housed in an 8-pin SOIC (0.154", 3.90mm width) package, providing independent high-side and low-side drive outputs for IGBTs and power MOSFETs in switching converter and motor drive topologies. The device is specified to source 1.9A peak and sink 2.3A peak gate current, supporting switching frequencies suitable for sub-MHz power conversion stages. It is fully operational to +600V and tolerant to negative transient voltage, with integrated dV/dt immunity that prevents false turn-on in noisy switching environments. What is a half-bridge gate driver? A gate driver is a power amplifier that translates low-power logic-level PWM signals from a microcontroller or DSP into the high-current, high-voltage drive required to rapidly switch the gate of a power MOSFET or IGBT. Half-bridge drivers specifically provide two coordinated outputs (high-side floating and low-side referenced) that drive one half of an H-bridge or a single switching leg, enabling efficient synchronous buck, boost, half-bridge, and full-bridge topologies. In the system hierarchy: gate driver -> MOSFET/IGBT driver -> power management IC -> discrete semiconductor. Key features of the IR2181STRPBF include a wide gate drive supply voltage range from 10V to 20V, independent undervoltage lockout (UVLO) for both high-side and low-side channels, and a typical propagation delay of 180ns. Logic inputs are 3.3V and 5V compatible, allowing direct interface with modern microcontrollers, DSPs, and FPGA-based control platforms without level shifters. The non-inverting input configuration simplifies PWM timing alignment in motor control firmware. The architecture uses a high-voltage level-shifting well with proprietary latch-up immunity, allowing the high-side channel to float up to 600V above ground. This monolithic integration eliminates discrete bootstrap components' complexity and enables a single-IC solution for half-bridge power stages from 100W to several kilowatts. Typical applications include driving the primary switching leg in switch-mode power supplies (SMPS), three-phase motor driver inverter stages (used in pairs with a third driver for the low-side IGBTs), Class D audio amplifiers, electronic ballasts for HID lighting, and industrial heating and welding inverters. The wide voltage tolerance also makes it suitable for automotive 12V/24V battery-fed systems and solar micro-inverters. When designing with this device, ensure the bootstrap capacitor on the VBS pin is sized to supply the high-side gate charge plus quiescent current during the on-time. Place a 1uF X7R ceramic bypass on VCC and a 100nF on VBS to decouple the floating supply rail. Avoid exceeding the absolute maximum VBS-VS of 20V and the dV/dt rating specified in the manufacturer datasheet. This page synthesizes distributor pricing across DigiKey, Mouser, and LCSC, drop-in compatible 8-SOIC alternatives, and practical design notes not found in the manufacturer datasheet alone.
IR21834STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR21834STRPBF is a 600V half-bridge gate driver IC with inverting and non-inverting inputs, delivering 1.9A source / 2.3A sink peak drive current in a 14-pin SOIC package. It operates from a gate-drive supply range of 10V to 20V with undervoltage lockout for both high-side and low-side channels, and tolerates negative transient voltages while being dV/dt immune. The driver is fully operational to +600V on the floating high-side channel, allowing direct bootstrap operation in half-bridge and full-bridge power stages. A half-bridge gate driver is a specialized power management IC that sits between a low-voltage control signal (from a microcontroller, DSP, or PWM controller) and the high-power MOSFETs or IGBTs in a switching power stage. It translates logic-level PWM commands into the high-current gate-charge pulses required to switch power semiconductors efficiently, while providing level-shifting isolation between the low-side control ground and the high-side floating supply referenced to the half-bridge switching node. Key features of this part include 3.3V and 5V logic-compatible inputs, matched propagation delay between channels for symmetric PWM timing, and a low-side input that can be configured as either inverting or non-inverting for design flexibility. The 14-SOIC package supports surface-mount assembly and provides adequate thermal performance for typical driver duty cycles where the IC itself dissipates only gate-charge related losses. The IR21834STRPBF uses a proprietary HVIC (high-voltage integrated circuit) process that integrates level-shifting, bootstrap diode functionality for the high-side supply, and robust ESD protection. The floating channel is specifically designed to handle the rapid dV/dt transitions present on the switching node of half-bridge converters without injecting spurious glitches into the gate-drive output. Typical applications include motor drive inverters (BLDC, PMSM, stepper drivers), switched-mode power supplies (SMPS) including half-bridge and full-bridge topologies, induction heating, uninterruptible power supplies (UPS), and DC-DC converters using synchronous rectification. The wide voltage tolerance makes it suitable for both 110/120V and 220/240V mains-powered industrial equipment as well as 400V/800V electric vehicle auxiliary systems. When designing with this part, place the bootstrap capacitor (typically 100nF to 1uF ceramic) close to the VB and VS pins to ensure reliable high-side startup. The VCC decoupling should be a 1uF ceramic in parallel with a larger bulk capacitor to handle the gate-charge current spikes. Verify the bootstrap refresh time under all PWM duty-cycle conditions to prevent the high-side supply from falling below the UVLO threshold. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers quickly evaluate the IR21834STRPBF for production designs.
IR2304SPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR2304SPBF is a high-voltage, high-speed power MOSFET and IGBT half-bridge gate driver with independent high-side and low-side referenced output channels, rated for bootstrap operation up to +600 V. Housed in an 8-pin SOIC (SO-8 N) package, the device integrates proprietary HVIC and latch-immune CMOS technologies for ruggedized monolithic construction and supports gate drive supply range of 10 V to 20 V. A gate driver is an integrated circuit that amplifies low-power control signals from a microcontroller or analog controller into the high-current drive required to switch the gate of a power MOSFET or IGBT. Half-bridge drivers specifically control one high-side and one low-side switch in a totem-pole configuration, which is the building block of DC-DC converters, motor drives, and Class D amplifiers. The IR2304SPBF belongs to the gate-driver category within the broader PMIC (Power Management IC) hierarchy, sitting between logic-level controllers and the discrete power switches they command. Key features include 130 mA source/sink gate drive current at the outputs, 220 ns typical propagation delay, matched propagation delay between the two channels for low distortion, and 3.3 V, 5 V, and 15 V input-logic compatibility. Undervoltage lockout (UVLO) is provided for both high-side and low-side channels, and the device is fully operational to +600 V with negative transient voltage tolerance and dV/dt immunity on the high-side reference. The IR2304SPBF architecture uses a level-shifting HVIC to translate the low-side logic input to the floating high-side channel referenced to the switching node. This monolithic construction eliminates the optocoupler or pulse transformer typically required for high-side drive in discrete designs, simplifying PCB layout and reducing BOM cost while improving reliability. Typical applications include low-cost half-bridge and full-bridge DC-DC converters, three-phase motor driver front ends, Class D audio amplifiers, electronic ballasts for HID and fluorescent lighting, and general-purpose gate-drive boards where a single 600 V-tolerant IC replaces discrete drive circuitry. When designing with this driver, ensure the bootstrap diode and capacitor values are sized for the high-side refresh current, which depends on switching frequency and high-side quiescent draw. Place a local ceramic bypass capacitor (typically 1 microfarad X7R) directly across VCC and VSS pins within 5 mm of the package to suppress the switching-current spikes. This page synthesizes distributor pricing as of 2026-09-15, drop-in alternative analysis with parametric proximity scores, and practical design notes that go beyond the manufacturer datasheet to support sourcing and design decisions.
IR2304STRPBF - 600V Half-Bridge Gate Driver | Infineon
The Infineon IR2304STRPBF is a 600 V half-bridge gate driver IC designed for driving N-channel power MOSFETs and IGBTs in high-side/low-side configurations, housed in an 8-pin SOIC (SO-8) package. The part delivers typical 0.29 A source and 0.6 A sink output currents, with a 10 V to 20 V supply range, a 600 V offset voltage rating on the high-side channel, and integrated shoot-through protection that prevents simultaneous conduction of the high-side and low-side switches. A non-inverting logic input accepts 3.3 V CMOS or LSTTL signals, simplifying interface with microcontrollers and DSPs. The floating channel tolerates negative transient voltages and is dV/dt immune, enabling robust operation in noisy switching environments. A half-bridge gate driver is a type of gate driver IC specifically designed to control one high-side and one low-side switch in a half-bridge topology used in switch-mode power supplies, motor drives, and Class D amplifiers. As a member of the broader gate driver family (gate driver -> driver IC -> power management IC -> semiconductor), the IR2304 reduces switching losses by providing high peak current to quickly charge and discharge the gate capacitances of large power MOSFETs or IGBTs, which the microcontroller or controller IC cannot drive directly. The integrated deadtime and matched propagation delays further prevent cross-conduction in the half-bridge. Key features include 600 V maximum offset voltage, 220 ns typical turn-on and turn-off propagation delay with matched delay between channels, and built-in deadtime to prevent shoot-through. The output stage uses a high pulse-current buffer designed for minimum driver cross-conduction. The 8-SOIC package supports surface-mount assembly and provides sufficient thermal performance for typical half-bridge applications in industrial and consumer environments. The IR2304 uses a bootstrap-capacitor technique for the high-side supply, allowing the high-side driver to float above the bus voltage while the low-side driver is referenced to ground. This architecture eliminates the need for an isolated DC/DC converter or level shifter in many applications, reducing BOM cost and PCB area. Typical applications include switch-mode power supplies (SMPS), DC-DC converters, motor control drives for HVAC and small appliances, Class D audio amplifiers, and general-purpose half-bridge and full-bridge (using two IR2304s) inverters for industrial automation. The non-inverting single-input control simplifies firmware design, as a single PWM signal controls both outputs with built-in deadtime. When designing with this device, ensure the bootstrap diode is a fast-recovery or ultrafast type rated above 600 V, and that the bootstrap capacitor is sized to supply the high-side gate charge for the switching frequency used. Place a local 0.1 µF VCC bypass capacitor and a 1 µF to 10 µF bulk capacitor as close as possible to the VCC pin to handle the gate charge currents. Avoid exceeding the negative VS transient rating to prevent latch-up of the high-side driver. This page combines distributor pricing, drop-in alternatives, and practical design notes not collected in the manufacturer datasheet.
IR25606STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR25606STRPBF is a 600V half-bridge gate driver IC housed in an 8-pin SOIC package, featuring integrated shoot-through protection for IGBT and MOSFET half-bridge configurations. The device delivers typical 200 mA source and 350 mA sink gate-drive currents and operates from a 10 V to 20 V VCC supply with logic-level inputs compatible with 3.3 V and 5 V microcontrollers. Its high-voltage level-shift technology tolerates up to 600 V on the high-side bootstrap return, enabling direct drive of N-channel power switches in offline and three-phase inverter topologies. A half-bridge gate driver IC is a specialized power-management semiconductor that controls the high-side and low-side switches in a switching half-bridge. These drivers sit hierarchically between gate drivers, MOSFET/IGBT drivers, power management ICs, and semiconductors, translating low-power PWM logic signals into the high-current gate-drive waveforms required to switch high-voltage power devices efficiently and reliably. Key features include integrated dead-time control that prevents cross-conduction, under-voltage lockout (UVLO) on both VCC and VB supplies, and matched propagation delays that simplify high-frequency PWM operation. The non-inverting input logic and single PWM input minimize firmware overhead. Combined, these features reduce BOM count by replacing discrete bootstrap diode and drive circuits with a single 8-pin IC. The IR25606STRPBF uses Infineon's proprietary HVIC technology with latch-immune CMOS construction, providing ±2 kV HBM ESD tolerance and dV/dt immunity exceeding 50 V/ns. Internal shoot-through protection logic ensures that the high-side and low-side outputs cannot be simultaneously active, preventing catastrophic bridge short-circuits even under fault conditions or noisy input transitions. Typical applications include switched-mode power supplies (SMPS), motor drive inverters for fans and pumps, electronic ballasts for HID and fluorescent lighting, and Class D audio amplifiers. The 600 V rating comfortably covers universal-input PFC front ends and 480 V industrial bus voltages when proper PCB clearance is observed. When designing with this driver, select the bootstrap capacitor to supply at least 10x the gate charge of the high-side MOSFET per switching cycle, and place a 100 V ultrafast diode between VCC and VB to recharge the bootstrap. Always respect the minimum and maximum supply-voltage limits to avoid UVLO misbehavior or HVIC overstress. This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IR38062MTRPBF - 15A Digital Sync Buck Regulator | Infineon
The Infineon IR38062MTRPBF is a 15 A single-input synchronous digital SupIRBuck buck regulator with a PMBus interface, housed in a 34-pin PQFN (5 x 7 mm) package. It integrates high-side and low-side MOSFETs plus an internal LDO that enables single 21 V operation, eliminating the need for a separate bias supply. The output voltage is adjustable from 0.5 V up to 0.875 x PVin (max 18.375 V) with 0.5 percent reference accuracy, and the switching frequency is programmable from 400 kHz to 1.5 MHz using the Rt/Sync pin or the PMBus digital interface. A buck regulator (also called a step-down DC-DC converter) is a power management IC that converts a higher DC input voltage to a lower DC output voltage with high efficiency by rapidly switching the input across an inductor and filtering the result. It belongs to the broader category of voltage regulators within power management ICs and is preferred over linear regulators whenever the input-to-output voltage differential is large, because switching conversion avoids the heavy thermal losses inherent to linear dropout regulation. Digital SupIRBuck regulators add PMBus telemetry and configuration on top of the analog PWM control loop. Key features of the IR38062MTRPBF include 15 A continuous output current, 0.5 percent reference accuracy, programmable switching frequency up to 1.5 MHz, internal soft-start, and comprehensive protection such as overcurrent, overvoltage, undervoltage, and thermal shutdown. The PMBus interface exposes voltage, current, temperature, and fault status registers, while the Rt/Sync pin allows the converter to be synchronized to an external clock or another regulator for multi-phase or noise-sensitive applications. Technically, the IR38062 uses voltage-mode control with a wide-bandwidth error amplifier, an integrated bootstrap diode, and per-cycle current limit on the low-side FET to deliver robust transient response. The 34-pin PQFN package exposes a large thermal pad to keep junction temperature rise within safe limits at full 15 A load, and the digital core allows designers to trim margining, sequencing, and fault thresholds in-circuit via PMBus without replacing components. Typical applications include POL (point-of-load) converters in telecom and networking equipment, FPGA and ASIC core/IO rails in servers and datacenters, industrial automation controllers, graphics cards, and any distributed power architecture that requires digital monitoring and tight regulation across multiple rails. When designing with this part, place input ceramic capacitors as close as possible to PVin and PGND, use the recommended inductor with low DCR for high efficiency, and connect the PMBus lines (SCL, SDA, SALERT) to a system controller for telemetry. Ensure adequate PCB copper on the thermal pad for 15 A continuous operation without exceeding the maximum junction temperature. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that go beyond the manufacturer datasheet, helping sourcing engineers and power designers evaluate the IR38062MTRPBF for production deployment.
IR38063MTRPBF - 25A Digital SupIRBuck PMBus POL | Infineon
The Infineon IR38063MTRPBF is a 25 A single-input synchronous buck regulator with PMBus digital interface, housed in a 34-pin PowerVFQFN (5x7 mm) package. It accepts an input voltage range of 5.5 V to 21 V and produces an adjustable output from 0.5 V to 0.875×PVin (up to 18.375 V) with 1% set-point accuracy, making it one of the highest-current density digital point-of-load (POL) converters in the SupIRBuck family. Integrated MOSFETs, a 5.2 V internal LDO bias, and PMBus telemetry for Vout/Iout/Temperature deliver a complete digital power solution in a compact footprint. A buck converter (step-down switching regulator) is a DC-DC converter topology that uses an internal high-side switch, low-side synchronous rectifier, and an LC output filter to produce a regulated lower voltage from a higher input rail. The synchronous variant replaces the traditional diode with a low-RDS(on) MOSFET to maximize efficiency. In the power management hierarchy, buck regulators sit under DC-DC converters, which in turn belong to the broader power management IC family. Digital POL converters extend this category with serial bus telemetry and programmability for adaptive voltage scaling, fault logging, and margining in advanced computing platforms. Key features of the IR38063MTRPBF include 25 A continuous output current, ±1% reference accuracy over line/load/temperature, internal current sensing with no external shunt resistor, and a switching frequency range of 200 kHz to 1.5 MHz selectable via an external resistor. Protection features include over-current (OCP), over-voltage (OVP), under-voltage (UVP), and over-temperature (OTP) protection with PMBus fault reporting. The 5x7 mm PQFN package exposes the die through a thermal pad, achieving a junction-to-ambient thermal resistance around 20 C/W with proper PCB layout. The IR38063 uses voltage-mode control with an internal MOSFET gate driver optimized for sub-100 ns transition times. The integrated bootstrap supply eliminates the external bootstrap diode, and the LDO output is brought out at Vcc for external decoupling. The result is a converter that can deliver 25 A at 1.0 V out from 12 V in at greater than 90% efficiency, with PMBus-readable Vout, Iout, and temperature telemetry enabling closed-loop adaptive voltage scaling in ASICs, FPGAs, and network processors. Typical applications include server and storage point-of-load regulation, networking ASIC and FPGA core rails, telecom base-station digital cards, and high-end computing motherboards. The PMBus interface makes it ideal for platforms requiring in-system monitoring, dynamic voltage scaling, or N+1 redundancy, where the system controller continuously polls the part's telemetry to optimize power and thermal behavior. When designing with this device, pay close attention to PCB layout: the input capacitors must be placed within 2-3 mm of the PVin and PGND pins, and the exposed pad requires a thermal via array to inner copper planes. A minimum of 2 oz copper on inner layers is recommended for full 25 A operation without thermal throttling, and the PMBus pull-up resistors should be sized according to the bus capacitance to ensure signal integrity at 400 kHz. This page synthesizes distributor pricing, drop-in same-family SupIRBuck alternatives, and PMBus design notes not found in the manufacturer datasheet alone, helping engineers evaluate the IR38063MTRPBF for next-generation digital POL designs.
IR38365MTRPBFAUMA1 - 30A OptiMOS IPOL Buck Regulator | Infineon
The Infineon IR38365MTRPBFAUMA1 is a 30A OptiMOS IPOL single-input-voltage synchronous buck regulator with on-chip PWM controller and co-packaged low-duty-cycle-optimized MOSFETs, housed in a 34-pin PowerVFQFN package. It operates from 4.5V to 16V input, delivers an adjustable output down to 0.5V, and supports an Intel Serial VID (SVID) and I2C/PMBus interface for digital power management in computing platforms. A buck regulator (also called a step-down DC-DC converter or switching regulator) is a switching power supply topology that converts a higher DC input voltage to a lower DC output voltage by chopping the input with a MOSFET switch, then smoothing with an LC filter. It belongs to the broader category of voltage regulators within power management ICs and is preferred over linear regulators when high step-down ratios or high output currents would cause unacceptable linear dissipation. Key features include 30A continuous output current in a thermally enhanced 34-pin PowerVFQFN (5x6mm) package, 0.5V to approximately 5V adjustable output voltage range via external resistor divider, internal synchronous MOSFETs using Infineon's OptiMOS technology for high efficiency (>90% at typical loads), and adaptive voltage positioning. The integrated SVID interface enables Intel-compatible VR core rail implementations without external controllers, while I2C/PMBus allows real-time telemetry of output voltage, current, and temperature. The on-chip PWM controller uses voltage-mode control with selectable switching frequency, and the device integrates protection features including over-current protection (OCP), over-voltage protection (OVP), under-voltage protection (UVP), over-temperature protection (OTP), and pre-bias startup. Telemetry parameters (VOUT, IOUT, temperature) are accessible via PMBus. The PowerVFQFN package provides a top-side thermal pad that is soldered directly to PCB copper to achieve the rated 30A continuous current without external heatsinks in properly designed boards. Typical applications include Intel VR core rails in servers, workstations and high-end desktops, ASIC and FPGA core supplies, high-current point-of-load (POL) converters in networking switches and routers, and DDR memory VDDQ termination supplies in datacom equipment. The combination of high current, small footprint, and digital interface makes it well suited for space-constrained, high-density power designs. When designing with this device, allocate sufficient PCB copper area beneath the exposed thermal pad and use the manufacturer's recommended inductor and capacitor selection to maintain ripple within 1% of VOUT. SVID/PMBus programming must follow Intel VR13/VR14 reference designs; consult the manufacturer datasheet for the exact command set and timing. This page synthesizes Infineon datasheet values, distributor stock and pricing, drop-in and same-family alternatives, and practical design notes that are not consolidated on any single distributor page.
IR3883MTRPBF - 3A 800kHz Integrated POL Buck Regulator | Infineon
The Infineon IR3883MTRPBF is a 3 A synchronous buck regulator with integrated MOSFETs, switching at a fixed 800 kHz, housed in a 16-lead PQFN (3 x 3 mm) package. It provides an adjustable output voltage from 0.5 V up to a value determined by the input rail, and operates from a wide VIN range suitable for point-of-load conversion in distributed power architectures. A buck converter (step-down switching regulator) is a DC-DC power topology that efficiently reduces a higher input voltage to a lower regulated output voltage by chopping the input with a high-side switch and smoothing the result through an LC filter. Compared with linear regulators, switching bucks dissipate far less power at large VIN-VOUT deltas, making them the preferred choice for high-current POL rails. The IR3883MTRPBF sits within the family of integrated POL regulators (Point-of-Load ICs) in the broader power management IC category, where the controller, gate drivers, and power MOSFETs are co-packaged for minimum footprint and design simplicity. Key differentiating features include Infineon's Enhanced Stability (EaSy) engine, which provides loop compensation without external RC networks and allows the use of all-ceramic output capacitors. The on-chip PWM controller plus monolithic MOSFETs form a complete synchronous buck in a 3 x 3 mm PQFN footprint, enabling high power density. Internal 5 V LDO bias supports single-rail operation, and built-in protection features (OCP, OVP, UVLO, thermal shutdown) increase system robustness. The architecture uses voltage-mode control with the EaSy compensation scheme to maintain stable operation across load and temperature variations. Synchronous rectification replaces the external Schottky diode with a low-side MOSFET, achieving higher efficiency than asynchronous buck topologies at light loads due to diode conduction loss elimination. The 800 kHz switching frequency is a deliberate balance between inductor size and switching loss. Typical applications include server and telecom POL rails, FPGA and ASIC core supplies, networking switch point-of-load conversion, DDR memory VTT rails, and industrial embedded computing modules. Its small footprint and high efficiency make it well suited for space-constrained boards where multiple POL voltages are required. When designing with the IR3883MTRPBF, place a 2.2 uF low-ESR ceramic bypass close to the VCC pin and follow Infineon's recommended inductor and output capacitor selections to remain within the EaSy stability envelope. For single-rail operation, connect VIN to PVIN directly; for an external bias, tie VIN to VCC to bypass the internal LDO. This page synthesizes distributor pricing, drop-in compatible alternatives, and practical design notes not consolidated on the manufacturer datasheet alone.
IR3889MTRPBF - 30A Sync Buck Regulator | Infineon | POL
The IR3889MTRPBF is a fully integrated synchronous buck regulator from Infineon Technologies, part of the OptiMOS IPOL (integrated point-of-load) family. It delivers up to 30A of continuous output current from a 4.3V to 17V single supply, or from 2.0V to 17V when an external VCC is supplied, in a compact PG-IQFN-31 package measuring 5mm x 6mm. A synchronous buck converter is a DC-DC step-down regulator that uses a high-side and low-side MOSFET instead of a diode to reduce conduction losses, making it the preferred topology for high-current point-of-load conversion. The IR3889 belongs to the power management IC hierarchy: IPOL -> integrated power stage -> DC-DC converter -> voltage regulator. It integrates the PWM controller, OptiMOS power MOSFETs, and bootstrap diode, minimizing external component count. Key features include a fast Constant-On-Time (COT) control engine that eliminates complex loop compensation and achieves rapid transient response, stability with ceramic output capacitors, and a precision 0.8V +/-0.5% reference. The output voltage is adjustable from 0.5V to 0.875 x VIN. Technically, the enhanced COT scheme simplifies design while providing fast control response to load steps typical of FPGA and processor cores. The integrated OptiMOS FETs deliver high efficiency at 30A, and the QFN exposed pad provides low thermal resistance for heat extraction into the PCB copper pour. Typical applications include 30A POL rails for networking switches, servers, storage systems, and telecom infrastructure powering FPGAs, ASICs, and DSPs. Pricing starts at approximately $1.82 (as of 2026-08-29, LCSC). Design tip: solder the exposed pad to a large copper area; at 30A loads, thermal management and minimum output capacitance per the datasheet are critical for stability.