IR2153SPBF - 600V Self-Oscillating Half-Bridge Driver | Infineon
部品番号: IR2153SPBF ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.65 | $1.65 |
| 10 | $1.48 | $14.80 |
| 100 | $1.27 | $127.00 |
| 500 | $1.1 | $550.00 |
| 1,000 | $0.97 | $970.00 |
| 2,500 | $0.86 | $2,150.00 |
IR2153SPBF 概要
A half-bridge gate driver IC is a power-management building block that drives the high-side and low-side MOSFETs (or IGBTs) of a half-bridge converter from a single low-voltage control input. The IR2153 is part of the broader gate-driver hierarchy: gate driver -> half-bridge driver -> high-voltage gate driver -> power management IC -> semiconductor. Its self-oscillating topology places it in the SMPS controller family, where timing RT/CT sets the switching frequency and the internal logic adds the programmable deadtime needed to prevent shoot-through.
Key features include 600 V offset voltage tolerance on the high-side channel, 15.6 V gate-clamp for protecting logic-level MOSFETs, programmable oscillator frequency through external RT and CT, internal deadtime control, and a CT-pin shutdown that disables both gate outputs with a logic-low signal. The internal bootstrap structure requires only a single low-voltage supply, simplifying PCB layout and reducing external component count compared with discrete half-bridge implementations.
The architecture uses a CMOS 555-style oscillator feeding a high-side level shifter and a low-side driver, with both channels rated for negative transients on the switching node. This makes the part tolerant of the harsh dv/dt environment typical of half-bridge converters, and the integrated bootstrap diode (on the 'D' variant) further reduces BOM count. The RC input circuit category identifies it as programmable-timing, not fixed-frequency or PWM-controlled by an external MCU.
Typical applications include self-oscillating half-bridge converters for electronic ballasts, switch-mode power supplies under 200 W, electronic transformers for halogen lamp replacement, and motor-driver front ends. The shutdown pin makes it suitable for ballast protection circuits that need to disable both gates on lamp removal. The 8-SOIC footprint is pin-compatible with other 8-pin gate drivers in the IR215x family.
When designing, keep the high-side bootstrap diode external on the standard S-variant (the IR2153DPbF has the internal diode), select RT and CT to program the frequency per the datasheet curves, and verify deadtime meets the MOSFET turn-off specification. Layout should keep the CT pin trace short to avoid noise injection that can false-trigger shutdown.
This page synthesizes distributor pricing for the IR2153SPBF, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select, source, and qualify the part quickly.
ドロップイン代替品: IR2153SPBF — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IR2153SPBF （同一形状・フットプリント） — 相違点: Package, Topology, Operating Temperature, Bootstrap Diode, Lead-Free / RoHS.
クイック比較ツール — 並列比較する代替部品を選択:
IR2153STRPBF
✅ ドロップイン✓ 在庫あり
$0.65 / 個
データシートを見る →IR2153DPbF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IR2155PBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IR2151PBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRS2001STRPBF
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IR2110SPBF
✅ ドロップイン✓ 在庫あり
$1.98 / 個
データシートを見る →IR2153SPBF 最大定格＆電気的特性
| 機能 | Half-Bridge Gate Driver |
| Input Type | RC (Self-Oscillating) |
| Number of Drivers | 2 (high-side + low-side) |
| High-Side Offset Voltage | Up to 600 V |
| Gate Clamp Voltage | 15.6 V (typ) |
| Configuration | Half-Bridge |
| Oscillator Topology | CMOS 555 timer equivalent (RT/CT) |
| Shutdown Feature | Yes (via CT pin, logic-low) |
| Bootstrap Diode | External (S-variant); internal on 'D' variant |
| パッケージ | 8-SOIC (S) |
| 実装タイプ | Surface Mount |
| 動作温度 | -40C to +125C |
| Lead-Free / Pb-Free | Yes (PbF suffix) |
| RoHS ステータス | Compliant (PbF designation) |
| トポロジー | Self-Oscillating Half-Bridge Driver |
| Drive Logic | Non-Inverting (single-ended RC input) |
IR2153SPBF ピン構成
| ピン 1 | VCC — Logic and gate-drive supply voltage (12 V to 15 V typical; 15.6 V clamp) |
| ピン 2 | RT — Timing resistor connection (sets oscillator charge current) |
| ピン 3 | CT — Timing capacitor and shutdown input (low disables both gate outputs) |
| ピン 4 | GND — Logic and gate-driver ground return |
| ピン 5 | LO — Low-side gate-driver output (drives low-side MOSFET) |
| ピン 6 | VS — High-side floating supply return (half-bridge switching node) |
| ピン 7 | HO — High-side gate-driver output (drives high-side MOSFET) |
| ピン 8 | VB — High-side floating gate-drive supply (bootstrapped from VCC) |
主な用途
IR2153SPBF の用途: 6 件s: Fluorescent Electronic Ballast, Electronic Transformer (Halogen Replacement), Auxiliary SMPS Half-Bridge Converter (<200 W), Induction Cooker / Heating Inverter, Motor Driver Half-Bridge Stage, Offline LED Driver (Simple Resonant Topology).
Fluorescent Electronic Ballast
The IR2153SPBF is a classic and widely deployed electronic ballast controller for fluorescent and HID lamps. Its 600 V high-side rating directly drives the half-bridge of T8/T5 fluorescent ballasts from 120/230/277 VAC mains without external level shifting. The internal CMOS 555-style oscillator lets designers program the switching frequency from approximately 20 kHz to 100 kHz with a single RT and CT, while the CT-pin shutdown feature enables lamp-removal or lamp-fault protection circuits that disable both gate outputs safely. Compared with discrete 555-timer + bootstrap designs, the IR2153SPBF shrinks the BOM, eliminates external deadtime circuitry, and provides 15.6 V gate clamping for MOSFET gate-oxide protection.
おすすめ
Electronic Transformer (Halogen Replacement)
The IR2153SPBF is a workhorse for 12 V electronic transformer modules that replace conventional 50/60 Hz transformers for low-voltage halogen lamps. Its self-oscillating half-bridge topology converts 230 VAC mains into a high-frequency (>20 kHz) half-bridge drive, allowing a small ferrite-core step-down transformer to deliver 12 V/100 W efficiently. The integrated deadtime and 15.6 V gate clamp protect MOSFETs from shoot-through and gate over-stress, while the 8-SOIC footprint fits in compact lamp-base modules. Designers benefit from the 555-style timing programming (RT/CT) that matches classic offline SMPS design methodology and the wide 600 V high-side tolerance that covers rectified mains directly.
おすすめ
Auxiliary SMPS Half-Bridge Converter (<200 W)
The IR2153SPBF is well suited for sub-200 W isolated half-bridge SMPS designs where simplicity and low BOM cost outweigh the need for closed-loop PWM control. Its self-oscillating architecture eliminates the PWM controller IC entirely, with the IR2153SPBF providing both the timing function and the half-bridge drive. The 600 V high-side rating supports universal-input (85-265 VAC) designs after the bridge rectifier and bulk capacitor. Compared with UC3842 + IR2110 designs, the IR2153SPBF reduces part count by one IC and simplifies the feedback loop because the converter operates open-loop or with simple secondary-side regulation. Its 8-SOIC footprint eases PCB layout in dense auxiliary supplies.
おすすめ
Induction Cooker / Heating Inverter
The IR2153SPBF is used in low-cost induction cooking and induction-heating inverter front ends where the self-oscillating topology simplifies resonant-tank drive. Its 600 V rating covers rectified mains directly, while the programmable RT/CT lets designers tune the resonant frequency to match the induction coil and load pan. The CT-pin shutdown supports pan-removal detection and overtemperature latching circuits that disable both gate outputs safely. Compared with dedicated induction-cooker controllers like the IGBT-driver combo L6565+L6384, the IR2153SPBF offers lower cost and a smaller BOM at the expense of advanced features like soft-start and PFC. Suitable for sub-2 kW domestic induction cookers.
おすすめ
Motor Driver Half-Bridge Stage
The IR2153SPBF can drive the half-bridge of small BLDC or brushed DC motor inverter stages up to 600 V bus voltage. Its CT-pin shutdown function integrates cleanly with external fault-detection circuits, allowing fast disable of the motor drive on overcurrent or sensor fault. The self-oscillating topology is appropriate for open-loop variable-frequency drives where the MCU cannot source a precise PWM signal directly. The 8-SOIC footprint is pin-compatible with other IR215x variants, giving designers an upgrade path (IR2153DPbF adds internal bootstrap diode, IR2153STRPBF is the tape-and-reel production version). Typical use cases include ceiling fans, small pumps, and 100-200 W appliance motors.
おすすめ
Offline LED Driver (Simple Resonant Topology)
The IR2153SPBF is used in low-cost offline resonant LED-driver front ends where the self-oscillating topology drives a small high-frequency transformer from rectified mains. The 600 V high-side rating covers universal-input offline converters, and the integrated 15.6 V gate clamp protects standard-level MOSFETs used in the primary half-bridge. The CT-pin shutdown provides a simple thermal-protection interface, allowing an external NTC or comparator to disable the driver when the LED array overheats. Compared with dedicated PFC + LLC controller combos, the IR2153SPBF offers much lower BOM cost and smaller PCB footprint at the expense of power factor and dimming features.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IR2153SPBF — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IR2153STRPBF | IR2153DPbF | IR2155PBF | IR2151PBF |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| High-Side Offset Voltage | 600 V | 600 V | 600 V | 600 V | 600 V |
| Gate Clamp Voltage | 15.6 V | 15.6 V | 15.6 V | 15.6 V | 15.6 V |
| Internal Bootstrap Diode | No | No | Yes | No | No |
| CT-Pin Shutdown | Yes | Yes | Yes | No | No |
| Topology | Self-Oscillating (RT/CT) | Self-Oscillating (RT/CT) | Self-Oscillating (RT/CT) | Self-Oscillating (RT/CT) | Self-Oscillating (RT/CT) |
| Packaging Format | Tube (95 pcs) | Tape & Reel (2500 pcs) | Tube | Tube | Tube |
| Unit Price (qty 1, approx, as of 2026-09-15) | $1.65 | $1.70 (approx) | $1.80 (approx) | $1.50 (approx) | $1.40 (approx) |
主な差別化要因
- Integrated CMOS 555-style oscillator eliminates external PWM controller （vs IR2110SPBF)
- CT-pin shutdown enables built-in fault protection （vs IR2155PBF)
- Lead-free / RoHS compliant (PbF suffix) （vs IR2153PBF (non-PbF))
- Tube packaging ideal for prototyping and low-volume production （vs IR2153STRPBF)
設計ノート
Keep the CT pin trace short and surround it with a ground guard ring to avoid noise injection that can false-trigger shutdown. Place RT close to the IR2153SPBF VCC pin to minimize timing jitter. The bootstrap diode (required for S-variant) and the high-side bypass capacitor must be placed within 5 mm of pins 7 (HO) and 8 (VB) to minimize parasitic inductance on the high-side floating supply. According to the Infineon datasheet, a 0.1 uF ceramic bypass on VCC and a 1 uF+ ceramic on VB are recommended values.
Route the VS trace (pin 6) directly to the half-bridge switching node; this node carries the high dv/dt that generates negative transients the IR2153SPBF must reject. Keep the low-side gate drive LO (pin 5) trace short and far from the high-side HO (pin 7) trace to avoid crosstalk. According to the Infineon datasheet, the high-side channel tolerates negative VS transients, but excessive negative transients can cause logic errors. Use a 4-layer PCB with a dedicated ground plane for offline applications to control EMI and improve noise immunity.
Estimated: at VCC=15 V, switching frequency=50 kHz, and a typical 1 nF MOSFET gate load, the IR2153SPBF gate-driver quiescent + switching losses total approximately 0.4 W per output channel. The 8-SOIC package has theta_JA of approximately 150 C/W, so total power dissipation of 0.8 W yields a junction rise of approximately 120 C above ambient - well within the 150 C max junction rating but with limited margin. For sustained high-frequency (>100 kHz) operation with large MOSFETs (>10 nC gate charge), consider the IR2153DPbF variant or add a small clip-on heatsink if ambient exceeds 70 C.
Common pitfalls when designing with the IR2153SPBF: (1) Forgetting the external bootstrap diode on the S-variant - the IR2153DPbF integrates it; if using the S-variant, a fast-recovery diode (UF4007 or better) and 1 uF/25 V bootstrap cap are required between VCC and VB. (2) Using RT or CT values outside the datasheet's recommended range causes erratic oscillation - keep RT between 1 kohm and 1 Mohm and CT between 1 nF and 1 uF. (3) Driving MOSFETs with Qg above approximately 50 nC without buffer stage - the IR2153SPBF can source/sink only ~250 mA typical at the gate outputs, so very large MOSFETs may need a discrete gate-driver buffer.
コンプライアンス情報
RoHS compliant per the PbF suffix in the part number and Infineon product page. Not AEC-Q100 qualified - intended for industrial / commercial / consumer markets, not automotive. REACH compliant per Infineon material declaration. Halogen-free and conflict-minerals status not explicitly stated in the verified web data and left as unknown.
