2EDL900G3XTMA1 vs 2EDL8124GXUMA1 比較

詳細な並列比較: 2EDL900G3XTMA1 メーカー: Infineon および 2EDL8124GXUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

仕様比較

パラメータ 2EDL900G3XTMA1 2EDL8124GXUMA1
ブランド Infineon Infineon
カテゴリ Power MOSFET Drivers Power MOSFET Drivers
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $2.20 $0.98
Product Type Dual-channel level-shift gate driver IC —
Topology Supported Half-bridge, high-side, low-side —
Isolation Type Junction isolation (JI), 120 V Junction isolation (JI)
Number of Channels 2 (high-side + low-side) —
Peak Source Current 4 A 3 A
Peak Sink Current 6 A 4 A
Drive Output Voltage Range 4 V to 16 V —
Supply Voltage (VDD/VBS) 4 V to 16 V —
Switching Device Supported Si MOSFET, enhancement-mode GaN FET —
Configurable Deadtime Yes (programmable) —
Integrated Current Sense Amplifier Yes —
PWM Modes Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted —
Input Logic Compatibility 3.3 V / 5 V / TTL (per datasheet) —
パッケージ TSNP-16 (3x3 mm) with exposed pad PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad
実装タイプ Surface Mount Surface Mount
動作温度範囲 -40 C to +125 C [DATA_NEEDED: operating temperature range in C]
MSLレベル 1 [DATA_NEEDED: MSL rating]
RoHS ステータス Compliant Compliant
Driver Configuration — Half-bridge (high-side + low-side)
Input Type — Non-inverting, TTL-compatible with hysteresis
Number of Drivers — 2
Bootstrap Supply (VBS) Maximum — 120 V
VCC Supply Range — [DATA_NEEDED: VCC min/max typical range]
Bootstrap Diode — Integrated
Propagation Delay (typical) — < 50 ns
Delay Matching Between Channels — [DATA_NEEDED: delay matching spec in ns]
UVLO — Present on VCC and VBS
Lead-Free — Yes

データシート&リソース

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