2EDL8124GXUMA1 - 120V Boot 4A Junction-isolated Gate Driver | Infineon
部品番号: 2EDL8124GXUMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.65 | $16.50 |
| 100 | $1.42 | $142.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.98 | $980.00 |
2EDL8124GXUMA1 概要
What is a junction-isolated gate driver? A gate driver is a power-management IC that sits between a low-current control PWM output and the high-capacitance gate of a switching MOSFET or GaN device, providing the current and voltage translation required to switch the device on and off quickly. Junction isolation (JI) replaces the older level-shifter + transformer bootstrap scheme with an on-die high-voltage transistor, reducing BOM, shrinking board area, and improving noise immunity. Within the broader taxonomy, the 2EDL8124GXUMA1 belongs to gate driver ICs -> MOSFET/IGBT drivers -> power management ICs -> analog and mixed-signal semiconductors.
Key features include 3 A peak source current, 4 A peak sink current, integrated 120 V bootstrap diode, undervoltage lockout (UVLO) on both VCC and VBS rails, TTL-compatible logic inputs with hysteresis, and a 4 mm x 4 mm thermally-enhanced VSON package with an exposed pad that keeps junction temperature rise manageable at continuous switching operation. The wide VBS supply range of up to 120 V and the 1 ns typical delay matching between channels minimize dead-time losses in high-frequency half-bridges.
The architecture combines a low-side driver powered directly from VCC (typical 10 V to 17 V) with a high-side driver powered by a bootstrap capacitor refreshed through the on-chip bootstrap diode during the low-side on-time. The junction-isolation barrier carries the high-side logic-level signal from input to high-side gate, with propagation delay matched within 1 ns between rising and falling edges to control dead-time accurately.
Typical applications include telecom and datacom intermediate bus converters, 48 V to point-of-load buck stages, industrial motor-driver half-bridges, solar micro-inverter power stages, and high-density server VRM blocks. In all of these the part delivers the rapid, matched-edge switching that high-efficiency synchronous rectification requires.
When designing with the 2EDL8124GXUMA1, place the bootstrap capacitor (typically 100 nF X7R) close to the VBS pin and the VCC decoupling capacitor close to the VCC pin, and route the high-side gate return (HS_GND / SW node) to minimize parasitic inductance. The exposed pad must be soldered to a sufficient copper pour to keep junction temperature within the 150 C absolute maximum.
This page synthesizes Infineon distributor pricing from DigiKey/Mouser/Octopart, drop-in alternatives in the same PG-VDSON-8-4 footprint, and practical design notes that complement - not just repeat - the manufacturer datasheet.
ドロップイン代替品: 2EDL8124GXUMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: 2EDL8124GXUMA1 （同一形状・フットプリント） — 相違点: Package, Configuration, Input Logic Compatibility, Number of Outputs, Number of Channels.
クイック比較ツール — 並列比較する代替部品を選択:
2EDL8024GXTMA1
✅ ドロップイン📋 参考代替品（カタログ未掲載）
2EDL8124GXUMA2
✅ ドロップイン📋 参考代替品（カタログ未掲載）
2ED21844S06JXUMA1
✅ ドロップイン✓ 在庫あり
$1.68 / 個
データシートを見る →2ED2106S06FXUMA1
✅ ドロップイン✓ 在庫あり
$0.78 / 個
データシートを見る →1ED3142MC12HXUMA1
✅ ドロップイン✓ 在庫あり
$1.32 / 個
データシートを見る →1EDN7126GXTMA1
✅ ドロップイン✓ 在庫あり
$0.29 / 個
データシートを見る →2EDL8124GXUMA1 最大定格＆電気的特性
| Driver Configuration | Half-bridge (high-side + low-side) |
| Input Type | Non-inverting, TTL-compatible with hysteresis |
| Number of Drivers | 2 |
| Peak Source Current | 3 A |
| Peak Sink Current | 4 A |
| Bootstrap Supply (VBS) Maximum | 120 V |
| Isolation Type | Junction isolation (JI) |
| Bootstrap Diode | Integrated |
| Propagation Delay (typical) | < 50 ns |
| UVLO | Present on VCC and VBS |
| パッケージ | PG-VDSON-8-4 (4 mm x 4 mm) with exposed pad |
| 実装タイプ | Surface Mount |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
2EDL8124GXUMA1 ピン構成
| ピン 1 | VCC — Low-side driver supply (typical 10 V to 17 V) |
| ピン 2 | HIN — High-side PWM input (TTL-compatible with hysteresis) |
| ピン 3 | LIN — Low-side PWM input (TTL-compatible with hysteresis) |
| ピン 4 | GND — Low-side logic and gate return |
| ピン 5 | LO — Low-side gate drive output |
| ピン 6 | HS — Switch node / high-side source return |
| ピン 7 | HO — High-side gate drive output |
| ピン 8 | VBS — Bootstrap supply (up to 120 V), internal bootstrap diode to VCC |
主な用途
2EDL8124GXUMA1 の用途: 6 件s: 48 V Telecom/Datacom Point-of-Load Converter, Industrial Motor-Driver Half-Bridge Stage, Solar Micro-Inverter Power Stage, Server VRM and High-Density POL Buck, EV Auxiliary 48 V to 12 V DC-DC Converter, High-Frequency Synchronous Buck LED Driver.
48 V Telecom/Datacom Point-of-Load Converter
The 2EDL8124GXUMA1's 120 V VBS bootstrap rating and 3 A / 4 A source/sink gate current fit directly into 48 V bus intermediate bus converters (IBC) and downstream point-of-load (POL) buck stages used in telecom and datacom power architectures. Driving two N-channel MOSFETs in a synchronous half-bridge, the part delivers sub-50 ns propagation delay that keeps dead-time short at multi-MHz switching frequencies, minimizing body-diode conduction losses. Integrated bootstrap diode eliminates an external component, shrinking the BOM and reducing leakage paths. According to the Infineon datasheet, the UVLO on both VCC and VBS protects against low-voltage startup glitches that can otherwise damage the high-side FET gate.
おすすめ
Industrial Motor-Driver Half-Bridge Stage
In industrial motor-driver power stages the 2EDL8124GXUMA1 drives the high-side and low-side IGBTs or MOSFETs of each half-bridge leg, providing the rapid 3 A / 4 A gate charge/discharge currents that keep switching losses low even at PWM frequencies above 50 kHz. The TTL-compatible inputs with hysteresis interface cleanly to 3.3 V or 5 V microcontrollers and DSPs without additional level shifters. Junction isolation provides robust common-mode noise immunity on the high-side channel, which is essential in motor environments with high dV/dt on the phase node. According to the Infineon datasheet, the wide VBS supply range supports bus voltages up to 100 V in industrial servo and BLDC drives.
おすすめ
Solar Micro-Inverter Power Stage
Solar micro-inverters convert the 25 V to 60 V panel output to AC mains and use a high-frequency isolated DC-DC stage feeding a line-frequency unfolding bridge; the 2EDL8124GXUMA1 drives the primary-side MOSFETs of the push-pull or full-bridge isolation stage. The 120 V VBS rating gives 2x headroom for 60 V panel Voc (cold), and the integrated bootstrap diode simplifies the high-side supply path. According to the Infineon datasheet, the PG-VDSON-8-4 package with exposed pad fits the compact PCB area required inside a weatherproof micro-inverter housing while keeping junction temperature under control at continuous switching.
おすすめ
Server VRM and High-Density POL Buck
In server and high-end desktop VRMs the 2EDL8124GXUMA1 drives the high-side and low-side FETs of multi-phase buck converters that step 12 V down to core voltages for CPUs, ASICs, and AI accelerators. The sub-50 ns propagation delay and matched rise/fall timing between the two channels minimize dead-time, reducing body-diode conduction losses and improving efficiency at multi-MHz per-phase switching frequencies. According to the Infineon datasheet, the 4 mm x 4 mm PG-VDSON-8-4 footprint enables the very high power density that 4-phase and 6-phase VRMs demand.
おすすめ
EV Auxiliary 48 V to 12 V DC-DC Converter
Automotive 48 V mild-hybrid systems require compact, high-efficiency 48 V to 12 V DC-DC converters that fit under-hood thermal envelopes, and the 2EDL8124GXUMA1 is well-suited to the half-bridge primary stage of these converters. The 120 V VBS rating tolerates 48 V bus transients and load-dump events, while the 4 mm x 4 mm package helps pack the converter into the small volume available behind the dashboard or near the battery pack. According to the Infineon datasheet, junction isolation improves common-mode robustness in the electrically noisy automotive environment.
おすすめ
High-Frequency Synchronous Buck LED Driver
High-brightness LED drivers for architectural, automotive headlamp, and stage lighting applications often use a synchronous buck topology with high switching frequency to shrink the inductor. The 2EDL8124GXUMA1 drives the high-side and low-side MOSFETs of such a buck stage, providing the matched propagation delay and fast edges that keep switching losses manageable above 1 MHz. The 120 V VBS rating covers up to 100 V LED string voltages, useful for horticulture and signage. According to the Infineon datasheet, the integrated bootstrap diode and UVLO simplify the design and protect the high-side gate during startup.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: 2EDL8124GXUMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | 2EDL8024GXTMA1 | 2EDL8124GXUMA2 | 2ED21844S06JXUMA1 | 2ED2106S06FXUMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VDSON-8-4 | PG-VDSON-8-4 (same) | PG-VDSON-8-4 (same) | PG-VDSON-8-4 (same) | PG-VDSON-8-4 (same) |
| Configuration | Half-bridge (HS+LS) | Half-bridge (HS+LS) | Half-bridge (HS+LS) | Half-bridge (HS+LS) | Half-bridge (HS+LS) |
| VBS Maximum | 120 V | 120 V | 120 V | 600 V | 600 V |
| Bootstrap Diode | Integrated | Integrated | Integrated | Integrated | Integrated |
| UVLO on VCC and VBS | Yes | Yes | Yes | Yes | Yes |
主な差別化要因
- Integrated 120 V bootstrap diode in a 4 mm x 4 mm VSON package （vs UCC27714 (TI))
- Asymmetric 3 A source / 4 A sink peak current （vs 2EDL8024GXTMA1)
- PG-VDSON-8-4 footprint shared with the 2EDL8024, 2ED2184, and 2ED2106 families （vs Discrete bootstrap + driver approach)
設計ノート
Place the bootstrap capacitor (typically 100 nF X7R 25 V minimum, 50 V preferred) as physically close as possible to the VBS pin of the 2EDL8124GXUMA1, and connect its ground return directly to the SW/HS node pad rather than to the PGND plane. The high-side gate return path carries the full dV/dt of the switching node - any parasitic inductance in this return creates ground bounce that can re-trigger the high-side input. Use a wide, short trace or a dedicated return trace beneath the high-side driver pin.
Estimated: at continuous switching of 1 MHz with 30 nC Qg MOSFETs and 12 V VCC, the 2EDL8124GXUMA1 dissipates roughly P = 2 * Qg * VCC * fsw = 2 * 30 nC * 12 V * 1 MHz = 0.72 W. With a typical PG-VDSON-8-4 theta_JA near 40 C/W on a 1 oz 4-layer PCB with a 50 mm x 50 mm copper pour, the junction rises about 29 C above ambient. Above 2 W dissipation, add thermal vias beneath the exposed pad and enlarge the copper pour to keep Tj below the 150 C absolute maximum.
Do not exceed the 120 V VBS absolute maximum on the 2EDL8124GXUMA1; in 48 V bus designs the bootstrap cap can briefly exceed VCC + Vbus if the high-side on-time is very short, so verify the bootstrap refresh cycle in worst-case low-duty operation. Always include a TVS or snubber across the SW node to limit ringing that could otherwise exceed the VBS rating. Lastly, ensure the VCC decoupling capacitor (>= 1 uF X7R) sits within 2 mm of the VCC pin - undersized or distant VCC caps cause logic glitches on the LIN/HIN inputs.
Route the HIN and LIN traces as 50 ohm microstrip if their length exceeds 5 mm, and keep them at least 2 mm away from the SW/HS node trace to avoid capacitive coupling that can re-trigger the inputs. Place a small ferrite bead on the VCC supply if the upstream source is a switching converter that injects noise below 50 MHz. The exposed pad of the PG-VDSON-8-4 package must be soldered to a continuous copper pour with at least 6 thermal vias to the inner ground plane for adequate heat extraction.
コンプライアンス情報
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified - for automotive designs requiring AEC-Q100, an automotive-grade variant would need to be sourced separately. REACH and conflict-mineral statements follow Infineon's corporate compliance program.
