2EDN8533RXTMA1 vs 1EDN7136UXTSA1 比較

詳細な並列比較: 2EDN8533RXTMA1 メーカー: Infineon および 1EDN7136UXTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

Infineon
2EDN8533RXTMA1 2EDN8533RXTMA1 - Dual 5A Low-Side Gate Driver IC | Infineon

2EDN8533RXTMA1 - Dual 5A Low-Side Gate Driver IC | Infineon

2EDN8533RXTMA1 ✓ 生産中

仕様比較

パラメータ 2EDN8533RXTMA1 1EDN7136UXTSA1
ブランド Infineon Infineon
カテゴリ Power MOSFET Drivers Power MOSFET Drivers
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.78 $0.74
Product Type Dual-channel low-side gate driver IC —
Driver Configuration Low-side, dual independent channels —
Peak Source/Sink Current 5 A per channel —
Number of Channels 2 —
Input Compatibility LV-TTL —
Input Voltage Tolerance (absolute max) -12 V to +22 V —
Supply Voltage (VCC) [DATA_NEEDED: VCC operating range] —
Output Resistance Low (per datasheet; see SG figure) —
Propagation Delay Matched between channels (excellent timing accuracy) —
Under-Voltage Lockout (UVLO) Yes (VCC UVLO) Yes (driver supply and logic input)
パッケージ PG-TSSOP-8 (exposed pad) TSNP-6 with exposed pad (PG-VSON-1)
実装タイプ Surface Mount Surface Mount
動作温度範囲 [DATA_NEEDED: operating temperature] -40 C to +150 C
MSLレベル [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
RoHS ステータス Compliant (per Infineon product page) Compliant
機能 — High-side / Low-side gate driver IC
Driven Device Type — GaN HEMT, N-channel MOSFET
出力数 — 2 (high-side and low-side)
Peak Source Current — 1 A
Peak Sink Current — 2 A
Driver Supply Voltage (Max) — 200 V
Logic Supply Voltage (VCC) — [DATA_NEEDED: VCC range]
Input Type — Truly Differential Input (TDI)
Active Miller Clamp — Yes (integrated)
Propagation Delay (Typ) — [DATA_NEEDED: propagation delay value]
Lead-Free — Yes
ハロゲンフリー — Yes (per Infineon product family convention)

データシート&リソース

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