2EDN8533RXTMA1 vs 1EDN7136UXTSA1 对比
详细并排对比 2EDN8533RXTMA1 出自 Infineon 和 1EDN7136UXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 2EDN8533RXTMA1 | 1EDN7136UXTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $0.74 |
| Product Type | Dual-channel low-side gate driver IC | — |
| Driver Configuration | Low-side, dual independent channels | — |
| Peak Source/Sink Current | 5 A per channel | — |
| Number of Channels | 2 | — |
| Input Compatibility | LV-TTL | — |
| Input Voltage Tolerance (absolute max) | -12 V to +22 V | — |
| Supply Voltage (VCC) | [DATA_NEEDED: VCC operating range] | — |
| Output Resistance | Low (per datasheet; see SG figure) | — |
| Propagation Delay | Matched between channels (excellent timing accuracy) | — |
| Under-Voltage Lockout (UVLO) | Yes (VCC UVLO) | Yes (driver supply and logic input) |
| 封装 | PG-TSSOP-8 (exposed pad) | TSNP-6 with exposed pad (PG-VSON-1) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | [DATA_NEEDED: operating temperature] | -40 C to +150 C |
| MSL 等级 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant (per Infineon product page) | Compliant |
| 功能 | — | High-side / Low-side gate driver IC |
| Driven Device Type | — | GaN HEMT, N-channel MOSFET |
| 输出数量 | — | 2 (high-side and low-side) |
| Peak Source Current | — | 1 A |
| Peak Sink Current | — | 2 A |
| Driver Supply Voltage (Max) | — | 200 V |
| Logic Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range] |
| Input Type | — | Truly Differential Input (TDI) |
| Active Miller Clamp | — | Yes (integrated) |
| Propagation Delay (Typ) | — | [DATA_NEEDED: propagation delay value] |
| Lead-Free | — | Yes |
| 无卤 | — | Yes (per Infineon product family convention) |