BSC009NE2LS5IATMA1 vs IPB020N08N5ATMA1 比較
詳細な並列比較: BSC009NE2LS5IATMA1 メーカー: Infineon および IPB020N08N5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 ✓ 生産中
仕様比較
| パラメータ | BSC009NE2LS5IATMA1 | IPB020N08N5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.02 | $1.45 |
| Manufacturer Part Number | BSC009NE2LS5IATMA1 | — |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS™ 5 (25V/30V family) | OptiMOS 5 (N-channel trench MOSFET) |
| トランジスタタイプ | N-Channel MOSFET | — |
| Configuration | Single with built-in diode | Single N-channel, 3-pin (2+Tab) |
| Drain-Source Voltage (V_DS) max | 25 V | — |
| Gate-Source Voltage (V_GS) max | 20 V | — |
| Gate-Threshold Voltage V_GS(th) typ | 1.7 V (range 1.0-2.0 V) | — |
| R_DS(on) max @ V_GS=10V | 0.95 mΩ | — |
| Continuous Drain Current (I_D) @ T_A=25°C | 40 A | — |
| Continuous Drain Current (I_D) @ T_C=25°C | 217 A (pulsed, datasheet rating) | — |
| Power Dissipation (P_D) @ T_A | 2.5 W | — |
| Power Dissipation (P_D) @ T_C | 74 W | — |
| Total Gate Charge (Q_G) typ | 23 nC @ V_GS=0-4.5V | — |
| Input Capacitance (C_iss) typ | 3200 pF | — |
| 動作温度範囲 | -55°C to +150°C | — |
| パッケージ | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TO263-3 (D2PAK-2) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Terminal Finish | Matte Tin (e3 per JESD-609) | — |
| Number of Terminals | 8 | — |
| RoHS ステータス | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Tc=25C | — | 120 A |
| Pulsed Drain Current (IDM) | — | 480 A |
| Maximum RDS(on) at VGS=10V | — | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at Tc=25C | — | 300 W |
| 動作接合温度 | — | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value, approx 0.5 C/W] |
| Avalanche Energy Rated (EAS) | — | [DATA_NEEDED: EAS value] |