BSC009NE2LS5IATMA1 vs IPB020N08N5ATMA1 对比
详细并排对比 BSC009NE2LS5IATMA1 出自 Infineon 和 IPB020N08N5ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
BSC009NE2LS5IATMA1 - 25V 0.95mΩ 217A OptiMOS 5 N-MOSFET | Infineon
BSC009NE2LS5IATMA1 ✓ 量产中
规格对比
| 参数 | BSC009NE2LS5IATMA1 | IPB020N08N5ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.02 | $1.45 |
| Manufacturer Part Number | BSC009NE2LS5IATMA1 | — |
| Manufacturer | Infineon Technologies | — |
| Technology | OptiMOS™ 5 (25V/30V family) | OptiMOS 5 (N-channel trench MOSFET) |
| 晶体管类型 | N-Channel MOSFET | — |
| Configuration | Single with built-in diode | Single N-channel, 3-pin (2+Tab) |
| Drain-Source Voltage (V_DS) max | 25 V | — |
| Gate-Source Voltage (V_GS) max | 20 V | — |
| Gate-Threshold Voltage V_GS(th) typ | 1.7 V (range 1.0-2.0 V) | — |
| R_DS(on) max @ V_GS=10V | 0.95 mΩ | — |
| Continuous Drain Current (I_D) @ T_A=25°C | 40 A | — |
| Continuous Drain Current (I_D) @ T_C=25°C | 217 A (pulsed, datasheet rating) | — |
| Power Dissipation (P_D) @ T_A | 2.5 W | — |
| Power Dissipation (P_D) @ T_C | 74 W | — |
| Total Gate Charge (Q_G) typ | 23 nC @ V_GS=0-4.5V | — |
| Input Capacitance (C_iss) typ | 3200 pF | — |
| 工作温度范围 | -55°C to +150°C | — |
| 封装 | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TO263-3 (D2PAK-2) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Terminal Finish | Matte Tin (e3 per JESD-609) | — |
| Number of Terminals | 8 | — |
| RoHS 状态 | Compliant | Compliant |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at Tc=25C | — | 120 A |
| Pulsed Drain Current (IDM) | — | 480 A |
| Maximum RDS(on) at VGS=10V | — | 2.0 mOhm |
| Gate-Source Voltage (VGS) max | — | +/- 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |
| Power Dissipation (PD) at Tc=25C | — | 300 W |
| 工作结温 | — | -55C to +175C |
| Thermal Resistance Junction-to-Case (RthJC) | — | [DATA_NEEDED: RthJC value, approx 0.5 C/W] |
| Avalanche Energy Rated (EAS) | — | [DATA_NEEDED: EAS value] |