BSC016N06NSTATMA1 vs BSC098N10NS5ATMA1 比較
詳細な並列比較: BSC016N06NSTATMA1 メーカー: Infineon および BSC098N10NS5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC016N06NSTATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.92 | $0.55 |
| Manufacturer | Infineon Technologies | — |
| Part Number | BSC016N06NSTATMA1 | — |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | 60 A |
| Continuous Drain Current (ID, Ta=25C) | 31 A | — |
| On-Resistance RDS(on) max (VGS=10V) | 1.6 mOhm | — |
| Power Dissipation (Tc) | 167 W | — |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| パッケージ | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55 C to +150 C | [DATA_NEEDED: Tj min/max] |
| MSLレベル | [DATA_NEEDED: MSL level] | 1 |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| Series | OptiMOS | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Ta) | — | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | — | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | — | 69 W |
| Diode Continuous Forward Current (IS) | — | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | — | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | — | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | — | 1.1 V (IF=30 A, Tj=25C) |
| Shipping Packaging | — | Tape & Reel (T/R) |