BSC016N06NSTATMA1 vs BSC098N10NS5ATMA1 Comparison
Detailed side-by-side comparison of BSC016N06NSTATMA1 by Infineon and BSC098N10NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC016N06NSTATMA1
BSC016N06NSTATMA1 - 60V OptiMOS 5 N-Channel MOSFET | Infineon
BSC016N06NSTATMA1 β ActiveInfineon
BSC098N10NS5ATMA1
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 β ActiveSpecification Comparison
| Parameter | BSC016N06NSTATMA1 | BSC098N10NS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.55 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSC016N06NSTATMA1 | β |
| FET Type | N-Channel | β |
| Technology | OptiMOS 5 | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-to-Source Voltage (VDS) | 60 V | β |
| Gate-to-Source Voltage (VGS) | Β±20 V | β |
| Continuous Drain Current (ID, Tc=25C) | 100 A | 60 A |
| Continuous Drain Current (ID, Ta=25C) | 31 A | β |
| On-Resistance RDS(on) max (VGS=10V) | 1.6 mOhm | β |
| Power Dissipation (Tc) | 167 W | β |
| Power Dissipation (Ta) | 3 W | 2.5 W |
| Package | PG-TDSON-8 FL (SuperSO8 5x6 mm) | PG-TDSON-8-7 (SuperSO8 5x6) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55 C to +150 C | [DATA_NEEDED: Tj min/max] |
| MSL Level | [DATA_NEEDED: MSL level] | 1 |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Series | OptiMOS | β |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID, Ta) | β | [DATA_NEEDED: ID Ta-rated value] |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| On-Resistance RDS(on) max @ VGS=10V | β | 9.8 mOhm |
| Gate-Source Voltage (VGS) max | β | [DATA_NEEDED: VGS max +/-] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |
| Power Dissipation (Tc=25C) | β | 69 W |
| Diode Continuous Forward Current (IS) | β | 63 A (Tc=25C) |
| Diode Pulse Current (IS,pulse) | β | 240 A (Tc=25C) |
| Diode Forward Voltage (VSD) typ | β | 0.9 V (IF=30 A, Tj=25C) |
| Diode Forward Voltage (VSD) max | β | 1.1 V (IF=30 A, Tj=25C) |
| Shipping Packaging | β | Tape & Reel (T/R) |