BSC034N06NSATMA1 vs BSC039N06NSATMA1 比較
詳細な並列比較: BSC034N06NSATMA1 メーカー: Infineon および BSC039N06NSATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC034N06NSATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.65 | $0.46 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 74 W | — |
| 動作温度範囲 | -55C to +150C | — |
| Technology | OptiMOS 5 | OptiMOS 5 (TrenchFET-style) |
| パッケージ | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| RoHS ステータス | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| トランジスタタイプ | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| 動作接合温度 | — | -55C to +150C |
| ピン数 | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |