BSC034N06NSATMA1 vs BSC039N06NSATMA1 对比
详细并排对比 BSC034N06NSATMA1 出自 Infineon 和 BSC039N06NSATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC034N06NSATMA1 | BSC039N06NSATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.65 | $0.46 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: IDM pulsed value at TC] |
| On-Resistance RDS(on) max at VGS=10V | 3.4 mOhm | 3.9 mOhm |
| On-Resistance RDS(on) max at VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5V] | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 74 W | — |
| 工作温度范围 | -55C to +150C | — |
| Technology | OptiMOS 5 | OptiMOS 5 (TrenchFET-style) |
| 封装 | PG-TDSON-8-7 (SuperSO8 5x6 mm) | PG-TDSON-8-6 (TDSON EP, 5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| RoHS 状态 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 5 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at TA | — | 19 A |
| Continuous Drain Current (ID) at TC | — | 100 A |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical and min/max] |
| Power Dissipation at TA (PD) | — | 2.5 W |
| Power Dissipation at TC (PD) | — | 69 W |
| 工作结温 | — | -55C to +150C |
| 引脚数 | — | 8 |
| Gate Drive Voltage (VGS) | — | ±20 V max |