BSC050N04LSGATMA1 vs BSC019N06NSATMA1 比較
詳細な並列比較: BSC050N04LSGATMA1 メーカー: Infineon および BSC019N06NSATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC050N04LSGATMA1 | BSC019N06NSATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.41 | $0.92 |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 40 V | — |
| Gate-to-Source Voltage (VGS) | ±20 V | — |
| Continuous Drain Current at 25C (ID, Ta) | 18 A | — |
| Continuous Drain Current at 25C (ID, Tc) | 85 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 57 W | — |
| On-State Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at VGS=10V] | — |
| On-State Resistance (RDS(on)) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 3 (trench MOSFET) | — |
| パッケージ | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) | PG-TDSON-8 FL (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +150C | -55C to +150C (junction) |
| Avalanche Energy Rated | Yes (single-pulse avalanche) | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 | 1 |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC019N06NSATMA1 |
| Technology / Family | — | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) at TA=25C | — | 100 A |
| On-State Resistance RDS(on) Max @ VGS=10V | — | 1.95 mΩ (typ) |
| Gate-Source Threshold Voltage VGS(th) Typ | — | 3.3 V |
| Power Dissipation (PD) at TA=25C | — | 136 W |
| Channel Type | — | N-Channel Enhancement Mode |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |