BSC077N12NS3GATMA1 vs BSC093N15NS5ATMA1 比較
詳細な並列比較: BSC077N12NS3GATMA1 メーカー: Infineon および BSC093N15NS5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC077N12NS3GATMA1 | BSC093N15NS5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.71 | $1.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | — |
| トランジスタタイプ | N-Channel MOSFET (enhancement-mode trench) | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta | 13.4 A | — |
| Continuous Drain Current (ID) at Tc | 98 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Tc | 139 W | — |
| 動作接合温度 | -55C to +150C | — |
| パッケージ | PG-TDSON-8-1 (SuperSO8 5x6 mm) | SuperSO8 5x6 (PG-TDSON-8-7) |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 8 | — |
| MSLレベル | 1 | [DATA_NEEDED: MSL level] |
| RoHS ステータス | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | — |
| Technology | — | OptiMOS 5 150V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at TC | — | 87 A |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | — | 9.3 mΩ |
| Power Dissipation (PD) at TC | — | 139 W |
| Gate Drive Voltage (VGS) Recommended | — | 10 V |
| 動作温度範囲 | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| ハロゲンフリー | — | [DATA_NEEDED: halogen free status] |