BSC077N12NS3GATMA1 vs BSC093N15NS5ATMA1 Comparación
Comparación detallada lado a lado de BSC077N12NS3GATMA1 por Infineon y BSC093N15NS5ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
BSC077N12NS3GATMA1 ✓ ActivoInfineon
BSC093N15NS5ATMA1 - 150V 9.3mΩ 87A OptiMOS 5 N-MOSFET | Infineon
BSC093N15NS5ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSC077N12NS3GATMA1 | BSC093N15NS5ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,71 | $1,83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 3 (120 V) | — |
| Tipo de transistor | N-Channel MOSFET (enhancement-mode trench) | — |
| Drain-Source Voltage (VDS) | 120 V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Continuous Drain Current (ID) at Ta | 13.4 A | — |
| Continuous Drain Current (ID) at Tc | 98 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-State Resistance RDS(on) max @ VGS=10V | 7.7 mΩ | — |
| Gate Threshold Voltage VGS(th) typ | 2.5 V | — |
| Total Gate Charge Qg typ | [DATA_NEEDED: Qg] | — |
| Power Dissipation (PD) at Tc | 139 W | — |
| Temperatura de unión de funcionamiento | -55C to +150C | — |
| Encapsulado | PG-TDSON-8-1 (SuperSO8 5x6 mm) | SuperSO8 5x6 (PG-TDSON-8-7) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Nivel MSL | 1 | [DATA_NEEDED: MSL level] |
| Estado RoHS | Compliant | Compliant |
| Automotive Grade | Yes (per Infineon part number suffix / datasheet) | — |
| Technology | — | OptiMOS 5 150V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 150 V |
| Continuous Drain Current (ID) at TC | — | 87 A |
| Drain-Source On-Resistance (RDS(on)) Max at VGS=10V | — | 9.3 mΩ |
| Power Dissipation (PD) at TC | — | 139 W |
| Gate Drive Voltage (VGS) Recommended | — | 10 V |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Sin halógenos | — | [DATA_NEEDED: halogen free status] |