BSC0911NDATMA1 vs BSC0993NDATMA1 比較
詳細な並列比較: BSC0911NDATMA1 メーカー: Infineon および BSC0993NDATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC0911NDATMA1 | BSC0993NDATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.46 | $1.32 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 25V | — |
| Configuration | Dual N-Channel (2 N-CH) | Dual N-Channel (Array) |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) | 18 A | — |
| Pulsed Drain Current (IDM) | 30 A | — |
| Power Dissipation (PD) | 1 W | — |
| パッケージ | PG-TISON-8 (8-PowerTDFN) | PG-TISON-8 |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度 | -55C to +150C (junction) | — |
| Channel Type | N-Channel Enhancement Mode | — |
| Technology | OptiMOS trench MOSFET | OptiMOS 5 trench MOSFET |
| Gate Threshold (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | [DATA_NEEDED: Qg value] |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Product Series | — | OptiMOS 5 30V |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) @ Ta | — | 17 A |
| Channel Mode | — | Enhancement |
| 動作温度範囲 | — | -55C to +150C (junction) |
| ESD Protection | — | Yes (integrated) |
| Lead-Free | — | Yes |
| Rds(on) max @ Vgs=10V | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) value] |