BSC118N10NSGATMA1 vs BSC0902NSATMA1 比較
詳細な並列比較: BSC118N10NSGATMA1 メーカー: Infineon および BSC0902NSATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC118N10NSGATMA1 | BSC0902NSATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $0.78 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 2 | — |
| FET Type | N-Channel | — |
| Mode | Enhancement (Normal Level) | — |
| Drain-Source Voltage (VDS) | 100 V | 30 V |
| Continuous Drain Current (ID) at Ta=25C | 11 A | — |
| Continuous Drain Current (ID) at Tc=25C | 71 A | — |
| Power Dissipation (PD) at Tc=25C | 114 W | — |
| パッケージ | PG-TDSON-8-1 (TDSON EP, 5x6 mm) | PG-TDSON-8-6 (SuperSO8) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作接合温度 | -55 C to +150 C | — |
| Technology | Trench MOSFET | — |
| Lead Plating | Pb-free | — |
| RoHS ステータス | Compliant | — |
| ハロゲンフリー | Yes | Yes, per IEC 61249-2-21 |
| JEDEC Qualification | Qualified per target application | — |
| Target Application | High-frequency SMPS, synchronous rectification | — |
| Gate Charge x RDS(on) FOM | Excellent (per datasheet) | — |
| トランジスタタイプ | — | N-Channel MOSFET |
| Continuous Drain Current (ID, Ta) | — | 24 A |
| Pulsed Drain Current (IDM, Tc) | — | 100 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 48 W |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical value] |
| RDS(on) @ VGS=10V max | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| RDS(on) @ VGS=4.5V max | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Total Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg typical] |
| 動作温度範囲 | — | -55C to +150C (Tj) |
| Qualification | — | JEDEC qualified for target applications |
| RoHS Compliance | — | Compliant (Pb-free lead plating) |
| Avalanche Rated | — | Yes (100% avalanche tested) |